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Thermal analysis of phonon temperature in nano transistor based on DPL model coupled with temporal temperature jump

机译：基于DPL模型和瞬态温度跃迁的纳米晶体管声子温度热分析。

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摘要

This paper reports a new approach for transient nano heat conduction and thermal analysis in nano MOSFET and tri-gate SOI MOSFET. The transient nano heat conduction is investigated using an electro-thermal model given by the DPL equation coupled with the second order temperature jump boundary condition. To the heat source by Joule effect in in this work is supposed constant in the channel region. Finite element method used to bring forth results. It found that the proposed model is able to predict phonon transport and phonon temperature in nano MOSFET and tri-gate SOI MOSFET. Furthermore, it is found that the tri-gate SOI MOSFET is more thermally efficient compared to the classical MOSFET.
机译：本文报道了一种用于纳米MOSFET和三栅极SOI MOSFET中瞬态纳米导热和热分析的新方法。使用由DPL方程给出的电热模型和二阶温度跃变边界条件，研究了瞬态纳米热传导。在这项工作中，通过焦耳效应对热源假定在通道区域是恒定的。用于产生结果的有限元方法。发现该模型能够预测纳米MOSFET和三栅SOI MOSFET中的声子输运和声子温度。此外，发现与传统MOSFET相比，三栅SOI MOSFET的热效率更高。

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