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Comparison Power of Semiconductor Lasers at wavelength 1480nm using InGaAs InGaAsP Materials for EDFA Pumping Scheme

机译:使用InGaAs InGaAsP材料在EDFA泵浦方案中比较波长为1480nm的半导体激光器的功率

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Long distance Optical Communications are affected by many problems; loss of signal is one of them. Erbium Doped Fiber Amplifier (EDFA) is the key to solve it. By using Semiconductor Laser as pumping source for EDFA, the signal can be brought back to it is normal condition. EDFA has a good wavelength operation at 1480nm. To achieve selected wavelength, we must construct the Semiconductor Laser that suitable in 1480nm. In that case, InGaAs and InGaAsP are the base materials to construct the Semiconductor Laser. At wavelength of 1480nm the materials that used are InGaAs and InGaAsP. The reason is it is suitable for wavelength selection. By using selected wavelength and materials, the Semiconductor Laser can be produced properly. Also, determining the parameter is the important thing to construct the Laser. By using Rate Equation, comparison of output power for InGaAs and InGaAsP at wavelength of 1480nm based on rate equation and can obtained four result. Those are injection current vs voltage, carrier density, photon density and output power vs injection current.
机译:长距离光通信受到许多问题的影响;信号丢失就是其中之一。掺Fiber光纤放大器(EDFA)是解决它的关键。通过使用半导体激光器作为EDFA的泵浦源,可以将信号恢复到正常状态。 EDFA在1480nm处具有良好的波长操作。为了获得选定的波长,我们必须构造适合1480nm的半导体激光器。在这种情况下,InGaAs和InGaAsP是构成半导体激光器的基础材料。在1480nm的波长下,使用的材料是InGaAs和InGaAsP。原因是它适合波长选择。通过使用选定的波长和材料,可以正确生产半导体激光器。同样,确定参数对于构造Laser非常重要。通过使用速率方程,基于速率方程比较在1480nm波长下InGaAs和InGaAsP的输出功率,可以获得四个结果。这些是注入电流与电压,载流子密度,光子密度以及输出功率与注入电流的关系。

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