Structural Comparison of Wide Band-Gap Semiconductors with Silicon Semiconductors and Performance Oriented Comparison for a High Switching Frequency Flyback Converter

机译：宽带隙半导体与硅半导体的结构比较以及高开关频率反激转换器的性能比较

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Wide Band Gap (WBG) semiconductors based on Silicon Carbide (SiC) and Gallium Nitride (GaN) are promising technologies for power electronics, because of their improved features which are higher critical electrical field, higher energy bandgap, and more thermal conductivity electron mobility. New abilities of such switching devices increase the overall efficiency of the power electronics applications. To learn the basics of Si, SiC and GaN MOSFETs, the structure of them will be investigated briefly. The effects on the R

机译：基于碳化硅（SiC）和氮化镓（GaN）的宽带隙（WBG）半导体是电力电子技术的有希望的技术，因为它们具有改进的特性，例如更高的临界电场，更高的能带隙以及更高的导热性电子迁移率。这种开关设备的新功能提高了电力电子应用的整体效率。为了学习Si，SiC和GaN MOSFET的基础知识，将简要研究它们的结构。对R的影响

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来源
《International Symposium on Multidisciplinary Studies and Innovative Technologies》|2018年|1-5|共5页
会议地点 Ankara(TR)
作者
Gürkan Gök; Ibrahim Alişar; Dinçer Gökcen;
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Electrical and Electronics Engineering Department Hacettepe University Ankara Turkey;

Electrical and Electronics Engineering Department Hacettepe University Ankara;

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关键词
MOSFET; Gallium nitride; Logic gates; Silicon; Silicon carbide; Switching frequency; Resistance;

机译：MOSFET;氮化镓逻辑门硅;碳化硅;开关频率；抵抗性;

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1. High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors [J] . I. Yonenaga, H. Koizumi, Y. Ohno, Journal of Applied Physics . 2008,第9期

机译：宽带隙ZnO中的高温强度和位错迁移率：与各种半导体的比较
2. Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect-Transistors [J] . Yasushi Hiraoka, Satoshi Matsumoto Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第12期

机译：准绝缘体上硅与常规绝缘体上功率金属氧化物半导体场效应晶体管的射频性能比较
3. Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices [J] . Christophe Raynaud, Dominique Toumier, Herve Morel Diamond and Related Materials . 2010,第1期

机译：垂直功率器件宽带隙半导体的高压和高温性能比较
4. Structural Comparison of Wide Band-Gap Semiconductors with Silicon Semiconductors and Performance Oriented Comparison for a High Switching Frequency Flyback Converter [C] . Gürkan G?k, Ibrahim Ali?ar, Din?er G?kcen International Symposium on Multidisciplinary Studies and Innovative Technologies . 2018

机译：具有硅半导体的宽带间隙半导体的结构比较和高开关频率反激转换器的性能面向比较
5. Methodology for Optimizing Phase-Shifted Full-Bridge Converters Employing Wide Band-Gap Semiconductors [D] . Shahabi, Ali. 2020

机译：用于优化采用宽带间隙半导体的相移全桥转换器的方法
6. Performance Comparisons of Polymer Semiconductors Synthesized by Direct (Hetero)Arylation Polymerization (DHAP) and Conventional Methods for Organic Thin Film Transistors and Organic Photovoltaics [O] . Arthur D. Hendsbee, Yuning Li 2018

机译：通过直接（杂）丙烯酸化聚合（DHAP）合成的聚合物半导体和常规方法的有机薄膜晶体管和有机光伏性能比较
7. On the Integration of Wide Band-gap Semiconductors in Single Phase Boost PFC Converters [O] . Hernandez Botella Juan Carlos, Andersen Michael A. E., Petersen Lars Press 2015

机译：单相Boost pFC变换器中宽带隙半导体的集成
8. Low Frequency Dielectric Properties of Wide Band-Gap Semiconductors. [R] . jenkins,scott m. 1976

机译：宽带隙半导体的低频介电特性。

Structural Comparison of Wide Band-Gap Semiconductors with Silicon Semiconductors and Performance Oriented Comparison for a High Switching Frequency Flyback Converter

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