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Design of NEMS contact switch for wide frequency applications

机译:适用于宽频应用的NEMS接触开关的设计

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With the rapid development of wireless communication, it''s highlighted now to applying Microano Electro Mechanical Systems(MEMS/NEMS) technique in the Radio Frequency(RF) field to manufacture subminiature and good performance RF-NEMS. In this paper, A nano-scaling NEMS series contact switch is designed, fabricated, scanning and measured, which has a moveable membrane with the upper gold electrodes, as well as the contact metal bar, underneath the SiON dielectric bridge. This structure results in electrically isolating bias from the RF signal, simplifying the fabrication process, and decreasing the pull-in voltage to a certain extent. The measured data show the pull-in voltage of 24.1V and the good RF performance of the insertion loss of beyond −20dB @0–40GHz on the “on” state, the isolation of below −38dB at 0–20GHz on the “off” state, indicating that the witch is suitable for the 0–30GHz applications.
机译:随着无线通信的飞速发展,现在重点介绍了在射频(RF)领域中应用微/纳米机电系统(MEMS / NEMS)技术来制造超小型和高性能RF-NEMS。在本文中,设计,制造,扫描和测量了一个纳米尺度的NEMS系列接触开关,该开关在SiON介电桥下面具有一个带有可移动膜的上部金电极以及接触金属条。这种结构导致偏置与RF信号电隔离,简化了制造过程,并在一定程度上降低了引入电压。测量数据显示,在“开”状态下,吸合电压为24.1V,插入损耗在-20dB @ 0–40GHz时具有良好的RF性能,在0–20GHz时,其隔离损耗低于-38dB。 ”状态,表明该巫婆适用于0–30GHz应用。

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