High Frequency Property Optimization of Heterojunction Bipolar Transistors Using Geometric Programming

机译：几何编程优化异质结双极晶体管的高频特性

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In this work, we theoretically optimize the high frequency property of silicon-germanium heteroj unction bipolar transistors (HBTs) using a geometry programming (GP) technique. It is known that the base transit time of semiconductor devices potentially is a function of doping profile, device geometry and materials which significantly dominate the high frequency property of HBTs. To maximize the cut-off frequency of HBTs, the subject is formulated as a GP optimization problem by physically considering the base transit time as an object function. The GP model is solved numerically so that the cutoff frequency of HBT could be optimized for specified upper and lower bounds of the base doping concentration, and certain Ge composition. This work also shows that for 13% Ge profile, the cut-off frequency may reach a maximal value.

机译：在这项工作中，我们在理论上使用几何编程（GP）技术优化了硅锗异质结双极晶体管（HBT）的高频特性。众所周知，半导体器件的基本传输时间可能是掺杂分布，器件几何形状和材料的函数，而掺杂轮廓，器件几何形状和材料明显地支配了HBT的高频特性。为了使HBT的截止频率最大化，可以通过将基本传递时间作为目标函数来考虑，将主题表述为GP优化问题。对GP模型进行数值求解，以便可以针对指定的基础掺杂浓度的上限和下限以及特定的Ge组成优化HBT的截止频率。这项工作还表明，对于13％的锗分布，截止频率可能会达到最大值。

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来源
《International Conference of Computational Methods in Sciences and Engineering 2007(ICCMSE 2007); 20070925-30; Corfu(GR)》|2007年|P.9971000|共2页
会议地点 Corfu(GR)
作者
Yiming Li; Ying-Chieh Chen;
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作者单位

Department of Communication Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu City, Hsinchu 300, Taiwan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类计算数学的应用;
关键词
bipolar transistors; impurity doping; SiGe; HBT; high frequency; oOptimization;

机译：双极晶体管;杂质掺杂; SiGe; HBT;高频;优化;

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1. Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors [J] . Martin Sanden, B. Gunnar Malm, Jan V. Grahn Microelectronics & Reliability . 2001,第6期

机译：横向基础设计规则，用于优化差分生长的SiGe异质结双极晶体管的低频噪声
2. Low-Frequency Noise Properties of SiGe Heterojunction Bipolar Transistors [J] . Meng-Wei Hsieh, Yue-Ming Hsin, Yi-Jen Chan, Japanese journal of applied physics . 2007,第9A期

机译：SiGe异质结双极晶体管的低频噪声特性
3. Low-frequency noise properties of N-p-n AlGaAs/GaAs heterojunction bipolar transistors [J] . Costa D., Harris J.S. Jr. IEEE Transactions on Electron Devices . 1992,第10期

机译：N-p-n AlGaAs / GaAs异质结双极晶体管的低频噪声特性
4. High Frequency Property Optimization of Heterojunction Bipolar Transistors Using Geometric Programming [C] . Yiming Li, Ying-Chieh Chen International Conference of Computational Methods in Sciences and Engineering . 2007

机译：使用几何规划异质结双极晶体管的高频特性优化
5. Technology and physical parameter extraction formalisms for the high-frequency optimization of self-aligned gallium arsenide/aluminum gallium arsenide heterojunction bipolar transistors. [D] . Pehlke, David Richard. 1994

机译：自对准砷化镓/砷化铝镓异质结双极晶体管高频优化的技术和物理参数提取形式。
6. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion [O] . A. Martí, A. Luque -1

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8. Indium phosphide double heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200 GHz [R] . Fung, A. K., Samoska, L., Velebir, J., 2005

机译：具有T形发射极金属特征的磷化铟双异质结双极晶体管具有超过200GHz的截止频率

High Frequency Property Optimization of Heterojunction Bipolar Transistors Using Geometric Programming

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