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首页> 外文会议>International Conference on High Magnetic Fields in Semiconductor Physics; 20040802-06; Tallahassee,FL(US) >MAGNETO-PHOTOLUMINESCENCE STUDY AT A FRACTIONAL QUANTUM HALL REGIME OF CHARGED EXCITONS IN A DILUTE MAGNETIC SEMICONDUCTOR
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MAGNETO-PHOTOLUMINESCENCE STUDY AT A FRACTIONAL QUANTUM HALL REGIME OF CHARGED EXCITONS IN A DILUTE MAGNETIC SEMICONDUCTOR

机译：稀磁半导体中带电激子的分数量子霍尔谱上的光致发光研究

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摘要

We have performed magneto-photoluminescence measurements on modulation doped n-type Cd_(1-x)Mn_xTe/Cd_(1-y)Mg_yTe single quantum wells. In low magnetic fields (the electrons filling factor ν > 1), we observed several photoluminescence lines associated with spin-singlet and spin-triplet charged excitons. In high magnetic fields (ν < 1), we observed only one of the spin-triplet charged excitons that are called as a bright type due to characteristic spin states of electrons and holes in dilute magnetic semiconductor quantum wells, where the photoluminescence intensity increased at a fractional value of ν(=2/3). We consider that the screening effect plays a crucial role for this behavior in high magnetic fields.
机译：我们已经对调制掺杂的n型Cd_（1-x）Mn_xTe / Cd_（1-y）Mg_yTe单量子阱进行了磁光致发光测量。在低磁场（电子填充因子ν> 1）中，我们观察到了与自旋单重态和自旋三重态带电激子相关的几条光致发光线。在高磁场（ν<1）中，我们仅观察到一种自旋三重态带电荷的激子，由于稀磁半导体量子阱中电子和空穴的特征自旋态，其被称为亮型激子，其中光致发光强度在分数ν（= 2/3）。我们认为屏蔽效应对于强磁场中的这种行为起着至关重要的作用。

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