RESISTANCE SPIKES INDUCED BY GATE-CONTROLLED VALLEY-SPLITTING IN SILICON

机译：硅栅控谷崩引起的电阻峰值

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Landau-level coincidences are examined in a (100) silicon 2DEG by tuning the valley-splitting with front- and back-gates. A coincidence under quantum Hall conditions between levels of opposite spin, opposite valley, but like orbital indices at ν = 6 is found to show suppressed resistance, while in marked contrast, coincidences at ν = 4i (where i is an integer) between adjacent orbital Landau levels exhibit resistance spikes.

机译：在（100）硅2DEG中，通过调整带有前门和后门的波谷分割，可以检查Landau级别的重合。在量子霍尔条件下，自旋，相反谷的水平之间的重合，但在ν= 6处的轨道指数相似时，显示出抑制的阻力，而在明显的对比中，在相邻轨道之间的ν= 4i（其中i是整数）时的重合朗道水平表现出阻力峰值。

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来源
《International Conference on High Magnetic Fields in Semiconductor Physics; 20040802-06; Tallahassee,FL(US)》|2004年|P.149-154|共6页
会议地点 TallahasseeFL(US)
作者
K. TAKASHINA; A. FUJIWARA; Y. TAKAHASHI; Y. HIRAYAMA;
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作者单位

NTT Basic Research Laboratories, NTT Corporation, Atsugi-shi, Kanagawa 243-0198, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词
level-coincidence; SIMOX; silicon;

机译：水平重合SIMOX硅;

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4. RESISTANCE SPIKES INDUCED BY GATE-CONTROLLED VALLEY-SPLITTING IN SILICON [C] . K. TAKASHINA, A. FUJIWARA, Y. TAKAHASHI, International Conference on High Magnetic Fields in Semiconductor Physics . 2005

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RESISTANCE SPIKES INDUCED BY GATE-CONTROLLED VALLEY-SPLITTING IN SILICON

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