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首页> 外文会议>International conference on laser physics 2010 >Binding energy and photoionization cross section of hydrogen-like donor impurity in cylindrical InAs Pschl-Teller quantum layer in magnetic field
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Binding energy and photoionization cross section of hydrogen-like donor impurity in cylindrical InAs Pschl-Teller quantum layer in magnetic field

机译：磁场中圆柱形InAs Pschl-Teller量子层中氢样供体杂质的结合能和光电离截面

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摘要

Using the effective mass approximation and a variational procedure, we have calculated the effects of confining potential and growth-direction applied magnetic field on the binding energy and photoionization cross section of a donor impurity in a cylindrical InAs Pschl-Teller quantum layer. We report the binding energy dependencies on the height and the inner and outer radii of the cylindrical layer, the applied magnetic field, and the parameters of the Pschl-Teller confining potential. The dependencies of the impurity-related photoionization cross section on the incident photon energy for the different values of the confining potential parameters and the geometrical parameters of the heterostructure have been also considered. The results show that the impurity related binding and energy photoionization cross section are non monotonic functions of the inputs here considered. Particularly, it is shown that the binding energy increases with the increase inner radius of the layer and decrease with the all another inputs considered in this work (height and outer radius of the layer, applied magnetic field, and asymmetry of the Pschl-Teller potential). In the case of the photoionization cross section the results show that with changes in the dimensions of the heterostructure and in the symmetry of the potential both blue shift and/or red shift of the maximum of the lineshape can be induced.
机译：使用有效的质量近似和变分程序，我们已经计算了约束电位和生长方向施加的磁场对圆柱形InAs Pschl-Teller量子层中施主杂质的结合能和光电离截面的影响。我们报告了结合能对圆柱层的高度和内，外半径，所施加的磁场以及Pschl-Teller约束电位参数的依赖性。还考虑了与杂质有关的光电离截面对约束光势参数和异质结构的几何参数的不同值的入射光子能量的依赖性。结果表明，与杂质相关的结合和能量光电离截面是此处考虑的输入的非单调函数。特别是，表明结合能随层内半径的增加而增加，并随该工作中考虑的所有其他输入（层的高度和外半径，施加的磁场以及Pschl-Teller势的不对称性）而降低。 ）。在光电离横截面的情况下，结果表明，随着异质结构的尺寸变化和电势对称性的变化，线形最大值的蓝移和/或红移都可以被诱导。

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