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首页> 外文会议>International conference on optical instruments and technology : MEMS/NEMS technology and applications; 20081116-19; Beijing(CN) >A novel resonant pressure sensor with boron diffused silicon resonator
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A novel resonant pressure sensor with boron diffused silicon resonator

机译：具有硼扩散硅谐振器的新型谐振压力传感器

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摘要

To improve the performance of the micro-machined resonant pressure sensor and simplify its fabrication process, a novel structure is proposed in which the boron diffused silicon (up to 15um thickness) and the bulk silicon are used as the resonant beam and pressure membrane respectively. The structural parameters were optimized through FEM to achieve the better sensitivity, and the relationships between the structural parameters and the sensitivity were established. Moreover, the fabrication processes were discussed to increase the product rate and the pressure sensor with the optimal structural parameters was fabricated by the bulk silicon MEMS processes. In order to enhance the signal of the sensor and make the closed-looped control of the sensor easily, electromagnetic excitation and detection was applied. However there is so high noise coming from the distributing capacitances between the diffused silicon layer and electrodes that reduce the signal to noise ratio of the sensor. Through the analysis of the micro-structure of the sensor, the asymmetrical excitation circuit was used to reduce the noise and then the detection circuit was designed for this sensor. The resonator of the sensor was packaged in the low vacuum condition so that the high quality factor (Q) with about 10000 can be achieved. Experimental tests were carried out for the sensor over the range of-80kPa to 100kPa, the results show that the sensitivity of the sensor is about 20kHz/100kPa, the sensitivity is 0.01%F.S. and the nonlinearity is about 1.8%.
机译：为了提高微机械谐振压力传感器的性能并简化其制造工艺，提出了一种新颖的结构，其中将硼扩散硅（厚度最大为15um）和块状硅分别用作谐振梁和压力膜。通过有限元方法对结构参数进行优化，以获得更好的灵敏度，并建立了结构参数与灵敏度之间的关系。此外，讨论了提高生产率的制造工艺，并通过体硅MEMS工艺制造了具有最佳结构参数的压力传感器。为了增强传感器的信号并易于进行传感器的闭环控制，应用了电磁激励和检测。但是，来自扩散的硅层和电极之间的分布电容会产生很高的噪声，从而降低了传感器的信噪比。通过对传感器微观结构的分析，采用非对称激励电路降低噪声，然后设计了该传感器的检测电路。传感器的谐振器在低真空条件下封装，因此可以实现约10000的高质量因数（Q）。在-80kPa至100kPa的范围内对传感器进行了实验测试，结果表明传感器的灵敏度约为20kHz / 100kPa，灵敏度为0.01％F.S。非线性度约为1.8％。

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