Traveling Wave Model of Uni-traveling Carrier Photodiode

机译：单行载波光电二极管的行波模型

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A traveling wave time domain model of bulk InGaAs/InP uni-traveling carrier photodiode is presented in terms of integral carrier density rate equation. The wavelength dependent responsivity at different absorption width has been derived from quantum mechanical principle. Output photocurrent response with time is found in close agreement with the experimental value.

机译：根据积分载流子密度速率方程，提出了块状InGaAs / InP单向载流子光电二极管的行波时域模型。从量子力学原理推导了不同吸收宽度下与波长有关的响应度。发现随时间变化的输出光电流响应与实验值非常一致。

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来源
《International Conference on Optics and Photonics 2015》|2015年|96541L.1-96541L.4|共4页
会议地点 Kolkata(IN)
作者
Senjuti Khanra; Abhirup Das Barman;
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作者单位

Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata-700009, W.B. India,ITRA project 'Mobile Broadband Service Support over Cognitive Radio Networks';

Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata-700009, W.B. India,ITRA project 'Mobile Broadband Service Support over Cognitive Radio Networks';

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Carrier density; Responsivity; Photodiodes;

机译：载流子密度响应能力光电二极管;

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Traveling Wave Model of Uni-traveling Carrier Photodiode

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