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Plasmonics-integrated Ge PIN-Photodetectors: Efficiency Enhancement by Al Nanoantennas and Plasmon Detection

机译:等离子集成的Ge PIN光电探测器:通过铝纳米天线和等离子检测提高效率

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摘要

The aim of integrating plasmonic functionality with photonic devices is twofold: on the one hand, plasmonic nanoantennas can enhance the functionality of photonic devices and enable their miniaturization. On the other hand, photonic devices can be a part of plasmonic transmission lines and act e.g. as plasmon detectors. Here, we present results on both aspects in a CMOS-compatible device setup using Ge PIN-photodetectors and Al nanostructures. Plasmonic nanoantennas are metallic nanostructures that enable the control and manipulation of optical energy in the visible and near-infrared spectrum and have been proposed as a means to enhance absorption and quantum yields for photovoltaics, to increase spatial resolution for optical microscopes and to enhance the energy efficiency of light-emitting devices. We present experimental results on the enhancement of Ge PIN-photodetector efficiency by Al nanoantennas. In order to investigate plasmon waveguiding and detection, metal grating structures and metal-insulator-metal slot waveguides were fabricated by electron beam lithography in the Al metallization layer of Ge PIN-photodetectors. Photocurrent maps of the devices under local illumination show that plasmons can be optically excited at the grating and are then guided by the slot waveguide towards the Ge PIN-photodetector where they are detected as photocurrent. Using Ge PIN-photodetectors and Al nanostructures as a CMOS-compatible device setup, we show how plasmonic nanostructures can be used for efficiency enhancement of photonic devices and discuss plasmon detection with Ge PIN-photodetectors with possible applications.
机译:将等离子功能与光子设备集成在一起的目的是双重的:一方面,等离子纳米天线可以增强光子设备的功能并使其小型化。另一方面,光子装置可以是等离子传输线的一部分,并起例如作用。作为等离激元检测器。在这里,我们介绍了使用Ge PIN光电探测器和Al纳米结构的CMOS兼容设备设置的两个方面的结果。等离子体等离子天线是金属纳米结构,能够控制和操纵可见光谱和近红外光谱中的光能,并且已被提议作为一种手段来增强光伏的吸收和量子产率,增加光学显微镜的空间分辨率并增强能量发光器件的效率。我们目前通过铝纳米天线增强Ge PIN光电探测器效率的实验结果。为了研究等离子体激元的导波和检测,在PIN光电探测器的Al金属化层中通过电子束光刻技术制造了金属光栅结构和金属-绝缘体-金属缝隙波导。器件在局部照明下的光电流图表明,等离激元可以在光栅上被光激发,然后由缝隙波导引导到Ge PIN光电探测器,在此处将其检测为光电流。使用Ge PIN光电探测器和Al纳米结构作为CMOS兼容设备设置,我们展示了等离激元纳米结构如何用于提高光子器件的效率,并讨论了Ge PIN光电探测器的等离激元检测及其可能的应用。

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  • 来源
  • 会议地点 Kolkata(IN)
  • 作者单位

    Institute for Semiconductor Engineering, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany;

    Institute for Semiconductor Engineering, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany;

    Institute for Semiconductor Engineering, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany;

    Institute for Semiconductor Engineering, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany;

    Institute for Semiconductor Engineering, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany;

    Institute for Semiconductor Engineering, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    plasmonics; photodetector; optoelectronics; nanoparticles;

    机译:等离子体光电探测器光电子学纳米粒子;

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