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首页> 外文会议>International Conference on Power Electronics; 20020312-15; Shanghai(CN) >A Fivefold Increase In Cell Density Sets The New Milestone In TrenchFETreg; Device Performance
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A Fivefold Increase In Cell Density Sets The New Milestone In TrenchFETreg; Device Performance

机译：电池密度提高了五倍，为TrenchFET®器件性能树立了新的里程碑

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摘要

Throughout the last decade we have witnessed the advent of the portable electronic device and in so, observed the evolution of battery operated power management systems. Significant demands are now applied to the solid state switching elements of such systems, effectively pushing the silicon performance to its maximum limit. To this effect the industry's best power devices are falling short of the performance criteria, with today's best silicon technology not exhibiting all the characteristics sufficient enough to support the calls for low rds(on), improved figure of merit and smaller die size. Focusing on the most common power switch for low voltage applications, the power MOSFET. This paper will highlight and discuss a new proprietary advanced silicon technology that will enable a new generation of ground breaking MOSFET devices to be produced that will help satisfy the latest demands for ever more efficient power management and power conversion systems. This improved process has allowed the increase of TrenchFET® cell density by fivefold.
机译：在过去的十年中，我们见证了便携式电子设备的出现，并因此观察了电池供电的电源管理系统的发展。现在对此类系统的固态开关元件提出了重要要求，有效地将硅的性能推到了最大极限。为此，业界最好的功率器件未能达到性能标准，而当今最好的硅技术不能表现出足以支持低rds（on），改进的品质因数和更小的管芯尺寸的要求的所有特性。专注于低压应用中最常见的功率开关，功率MOSFET。本文将重点介绍和讨论一种新的专有高级硅技术，该技术将使新一代的突破性MOSFET器件得以生产，这将有助于满足对更高效的电源管理和电源转换系统的最新需求。这种改进的工艺使TrenchFET®电池密度增加了五倍。

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