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首页> 外文会议>International Conference on Proceeding amp; Manufacturing of Advanced Materials; 20060704-08; Vancouver(CA) >Phase Field Model Simulation of Abnormal Grain Growth by Solid-State Wetting
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Phase Field Model Simulation of Abnormal Grain Growth by Solid-State Wetting

机译：固态润湿异常晶粒生长的相场模型模拟

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Abnormal grain growth (AGG) takes place in many metallic systems especially after recryslallization of deformed polycrystals. The growth advantage has been attributed to the high mobility of the grain boundaries of the abnormally-growing grains. As a new approach to the growth advantage of AGG, however, we suggested the solid-state wetting, where a grain wets or penetrates the grain boundary or the triple junction of neighboring grains just as the liquid phase wets along the grain boundary or the triple junction. If the energy sum of the two grain boundaries is lower than the energy of the other grain boundary in contact at the triple junction, the high energy grain boundary will be replaced by the two low energy grain boundaries through the wetting process. Once the solid-state wetting occurs, the triple junction, which tends to be a rate-determining step in grain growth, migrates much faster than the grain boundaries in contact and therefore, the triple junction constraint in grain growth disappears. Here, we studied the effect of solid-stale wetting on AGG by phase field model (PFM) simulation and compared the microstructural feature of AGG with that observed experimentally in Fe-3%Si alloy. The misorientation angles between island and peninsular grains accompanied by AGG were measured using electron backscattered diffraction (EBSD). The PFM simulation shows the realistic microstructural evolution of island and peninsular grains during AGG by solid state wetting. Very high frequency of island and peninsular grains formed at or near the growth front of abnormally growing grains could be best explained by solid-state wetting.
机译：异常晶粒生长（AGG）在许多金属系统中都会发生，尤其是在变形多晶的再结晶化之后。生长优势归因于异常生长晶粒的晶界的高迁移率。但是，作为一种利用AGG的增长优势的新方法，我们建议采用固态润湿，即当液相沿着晶界或三重润湿时，晶粒润湿或渗透到晶界或相邻晶粒的三重结。交界处。如果两个晶界的能量之和低于在三重结处接触的另一个晶界的能量，则高能晶界将通过润湿过程被两个低能晶界代替。一旦发生固态润湿，往往是晶粒生长中决定速率的步骤的三键结迁移速度比接触时的晶界快得多，因此，三键结约束在晶粒生长中消失了。在这里，我们通过相场模型（PFM）模拟研究了固态润湿对AGG的影响，并将AGG的显微组织特征与在Fe-3％Si合金中实验观察到的特征进行了比较。使用电子背散射衍射（EBSD）测量了伴随AGG的岛状晶粒和半岛状晶粒之间的取向差角。 PFM模拟通过固态润湿显示了在AGG期间岛和半岛晶粒的实际微观结构演变。固态润湿可以很好地解释在异常生长晶粒的生长前沿或附近形成的岛状和半岛状晶粒的非常高的频率。

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