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Modelling Evolution of Nanostructures in Lateral Etching Processes

机译:在横向蚀刻过程中模拟纳米结构的演变

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摘要

The model of the evolution of nano- and microstructures in the self-formation process of underetching (lateral etching) layers was created for analysis and design of new self-alignment and self-formation technologies semiconductor devices and integrated circuits. The program was realized on the basis of a personal computer with the processor INTEL PENTIUM 4 and MATLAB 5.3 software. The results of the simulation were given for the different initial configurations of nanostructures. The experimental investigations evolution of microstructures in lateral etching processes of amorphous and polycrystalline films were performed and the results presented.
机译:建立了底蚀(横向蚀刻)层自形成过程中纳米结构和微观结构演变的模型,用于分析和设计新的自对准和自形成技术的半导体器件和集成电路。该程序是在带有处理器INTEL PENTIUM 4和MATLAB 5.3软件的个人计算机上实现的。仿真结果给出了纳米结构的不同初始配置。进行了非晶和多晶薄膜横向腐蚀过程中微观结构的实验研究,并提出了结果。

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