Modelling Geometry of Technological Masks in Lateral Etching Processes

机译：横向蚀刻过程中技术掩模的几何建模

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A model of the evolution geometry technological masks and underlaying layers in the lateral etching processes is created for analysis and design of new self-alignment and self-formation technologies semiconductor devices and integrated circuits. The results of the simulation for the different configurations masks and selectivities of the underlaying layers have been presented.

机译：建立了横向蚀刻工艺中的演化几何技术掩模和底层模型，用于分析和设计新的自对准和自形成技术的半导体器件和集成电路。呈现了针对不同配置的掩膜和底层的选择性的仿真结果。

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来源
《International Conference on Self-Formation Theory and Applications; 20031126-20031128; Vilnius; LT》|2003年|P.235-238|共4页
会议地点 Vilnius(LT)
作者
R. Navickas; R. Ciulada;
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作者单位

Radioengineering Department, Electronics Faculty, Vilnius Gediminas Technical University, Naugarduko 41-437, LT-2006 Vilnius, Lithuania;

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会议组织
原文格式 PDF
正文语种 eng
中图分类系统的分解与协调技术;
关键词
self-formation processes; lateral etching; evolution of geometry masks; semiconductor devices; integrated circuits;

机译：自形成过程;侧面蚀刻;几何掩模的演变;半导体器件;集成电路;

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2. Modelling Evolution of Nanostructures in Lateral Etching Processes [J] . R. Navickas, M. Romanov Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2004,第0期

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4. Modelling Geometry of Technological Masks in Lateral Etching Processes [C] . R. Navickas, R. Ciulada, Solid State Phenomena v.97-98 International conference on self-formation theory and applications . 2004

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Modelling Geometry of Technological Masks in Lateral Etching Processes

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