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首页> 外文会议>International Conference on Self-Formation Theory and Applications; 20031126-20031128; Vilnius; LT >Studies of Porous Layer Formation in p-Si by Spectroscopic Ellipsometry
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Studies of Porous Layer Formation in p-Si by Spectroscopic Ellipsometry

机译：椭圆偏振光谱法研究p-Si中多孔层的形成

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摘要

Porous surface layers were studied in a series of p-type Si samples etched anodically in electrolytes based on hydrofluoric acid. The optical response of the structure consisting of substrate and surface layers was investigated by spectroscopic ellipsometry in the range 1-5 eV. The experimental results were compared with calculations, which model the optical response of a multilayer structure. The model parameters were compared to the structural data obtained by AFM and SEM studies. The experimental investigations and model calculations revealed the regularities in the dependence of the optical response on the doping degree of substrate and parameters of technological procedure.
机译：在一系列基于氢氟酸的电解质中阳极蚀刻的p型Si样品中研究了多孔表面层。通过光谱椭圆偏振法在1-5eV范围内研究了由基底和表面层组成的结构的光学响应。将实验结果与计算结果进行比较，计算结果模拟了多层结构的光学响应。将模型参数与通过AFM和SEM研究获得的结构数据进行比较。实验研究和模型计算揭示了光学响应对衬底掺杂程度和工艺步骤参数的依赖性。

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