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首页> 外文会议>International Conference on Silicon Carbide and Related Materials; 20050918-23; Pittsburgh,PA(US) >Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots via Physical Vapor Transport (PVT)
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Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots via Physical Vapor Transport (PVT)

机译：通过物理气相传输（PVT）生长无微管的单晶碳化硅（SiC）锭

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摘要

The move towards commercialization of SiC based devices places increasing demands on the quality of the substrate material. While the industry has steadily decreased the micropipe (MP) levels in commercial SiC substrates over the past years, the achievement of wafers that are entirely free of MPs marks an important milestone in commercialization of SiC based devices. We present the results of a study for controlling the nucleation and propagation of MP defects in SiC ingots grown via PVT. Our studies confirm that during bulk growth of SiC, foreign polytype nucleation such as 3C-polytype occurs at the initial stages of growth (nucleation period) and/or during subsequent growth in the presence of facets. Results in this investigation suggest that polytype instability during crystal growth adversely impacts the MP density. Based on this key concept, growth conditions for nucleation and growth stages were optimized. These conditions were subsequently implemented in an innovative PVT growth environment to achieve a growth technique with highly effective polytype control. Under continuously modulated growth conditions, MPs induced by seed material and/or formed during the growth were eliminated. 2-inch and 3-inch diameter MP-free (zero MP density) conducting 4H-SiC ingots were obtained.
机译：碳化硅基器件的商业化趋势对基板材料的质量提出了越来越高的要求。在过去的几年中，尽管业界在稳步降低商用SiC衬底中的微管（MP）水平，但完全不含MP的晶圆的实现标志着SiC器件商业化的重要里程碑。我们介绍了控制通过PVT生长的SiC锭中MP缺陷的成核和传播的研究结果。我们的研究证实，在SiC的整体生长过程中，异质多晶型成核（例如3C多晶型）发生在生长的初始阶段（成核期）和/或随后在存在刻面的情况下生长。这项研究的结果表明，晶体生长过程中的多型不稳定性会对MP密度产生不利影响。基于此关键概念，优化了成核和生长阶段的生长条件。这些条件随后在创新的PVT生长环境中实施，以实现具有高效多型体控制的生长技术。在连续调节的生长条件下，消除了由种子材料诱导和/或在生长过程中形成的MP。获得了2英寸和3英寸直径的无MP（零MP密度）导电4H-SiC铸锭。

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