MICRODEFECT FORMATION IN LARGE SILICON WAFERS AFTER MULTISTAGE GETTERING ANNEALING

机译：多阶段吸杂退火后大型硅晶圆中的微缺陷形成

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Essentials of the microdefect (MD) formation at the early stages of the oxygen precipitation in Czochralski grown silicon crystals represent basic interest not only from the point of view studying of the creative mechanism for nucleation centers formation, but also for revealing of peculiarities for defects transformation during forming of internal getter in the wafers intended for manufacturing ULSI.

机译：切克劳斯基（Czochralski）生长的硅晶体中氧沉淀早期形成微缺陷（MD）的要点不仅从研究成核中心形成的创新机理的观点出发，而且对于揭示缺陷转变的特殊性表示了基本的兴趣。在用于制造ULSI的晶片中形成内部吸气剂的过程中。

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《International Conference on Single Crystal Growth and Heat amp; Mass Transfer(ICSC-2003) vol.2; 20030922-26; Obninsk(RU)》|2003年|P.398-408|共11页
会议地点 Obninsk(RU)
作者
Mezhenny M.V.; Milvidskii M.G.; Reznick V.J.;
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作者单位

State Institute of the Rare Metals, Moscow;

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原文格式 PDF
正文语种 eng
中图分类晶体生长工艺;
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专利

1. Formation of denuded zone and bulk microdefects in a czochralski-grown silicon wafer by internal gettering [J] . T. –H. Huh, H. –G. Ryu Journal of Korean Institute of Metal and Materials . 2000,第2期

机译：通过内部吸气法在克拉克拉斯基生长的硅片中形成剥蚀区和整体微缺陷
2. Microdefects induced by cavitation for gettering in silicon wafer [J] . Dan O. Macodiyo, Hitoshi Soyama, Takashi Masakawa, Journal of Materials Science . 2006,第16期

机译：空化引起的硅晶圆吸杂引起的微缺陷
3. Simultaneous gettering and emitter formation in multicrystalline-Si wafers by annealing phosphorus doped amorphous silicon compounds [J] . Rafel Ferre, Isidro Martin, Roland Trassl, Applied Physics Letters . 2011,第2期

机译：通过退火磷掺杂的非晶硅化合物在多晶硅晶片中同时进行吸杂和发射极形成
4. MICRODEFECT FORMATION IN LARGE SILICON WAFERS AFTER MULTISTAGE GETTERING ANNEALING [C] . Mezhenny M.V., Milvidskii M.G., Reznick V.J., International Conference on Single Crystal Growth and Heat Mass Transfer . 2003

机译：多级气体退火后大型硅晶片中的微碎屑形成
5. Thermodynamic investigation of nickel and gold in silicon wafer during high-temperature annealing. [D] . Li, Jianxing. 1991

机译：高温退火过程中硅片中镍和金的热力学研究。
6. Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors [O] . Kazunari Kurita, Takeshi Kadono, Satoshi Shigematsu, 2019

机译：CMOS图像传感器的暗电流光谱法对碳氢化合物分子离子注入的硅晶片进行吸杂设计
7. Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors [O] . Kazunari Kurita, Takeshi Kadono, Satoshi Shigematsu, 2019

机译：使用暗电流光谱法对CMOS图像传感器进行烃类分子离子植入硅晶片的邻近静物设计

MICRODEFECT FORMATION IN LARGE SILICON WAFERS AFTER MULTISTAGE GETTERING ANNEALING

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