MOLECULAR - KINETIC MODELLING OF PROCESS OF FORMATION OF NUCLEATING CENTERS OF A SOLID PHASE IN MELT SEMICONDUCTOR

机译：熔体半导体固相固核中心形成过程的分子动力学模型。

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Revealing of laws of formation of nucleating centers of a solid phase in the melt of the elementary semiconductor is the important problem of physics of the condensed condition, basic stage of which is finding the clusters of a steady configuration. For the decision of this task, as a first approximation, we used the microscopic approach based on minimization of potential energy of association of atoms because potential energy as function of distance between atoms completely defines a configuration of the atoms, which are included in cluster.

机译：揭示基本半导体熔体中固相成核中心的形成规律是凝聚态物理的重要问题，其基本阶段是寻找稳定构型的簇。对于此任务的决定，作为第一近似，我们使用基于原子缔合势能最小化的微观方法，因为势能作为原子之间距离的函数完全定义了原子的构型，这些原子包含在簇中。

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来源
《International Conference on Single Crystal Growth and Heat amp; Mass Transfer(ICSC-2003) vol.2; 20030922-26; Obninsk(RU)》|2003年|P.554-555|共2页
会议地点 Obninsk(RU)
作者
Sevostyanova A.R.; Khuhryansky Yu.P.;
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作者单位

Voronezh state technical university (Voronezh, Russia);

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会议组织
原文格式 PDF
正文语种 eng
中图分类晶体生长工艺;
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MOLECULAR - KINETIC MODELLING OF PROCESS OF FORMATION OF NUCLEATING CENTERS OF A SOLID PHASE IN MELT SEMICONDUCTOR

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