首页> 外文会议>International Conference on Single Crystal Growth and Heat amp; Mass Transfer(ICSC-2003) vol.2; 20030922-26; Obninsk(RU) >DIRECT NUMERICAL SIMULATION OF SI-MELT CONVECTION AND OXYGEN TRANSPORT IN A CZ-SYSTEM REAL GEOMETRY CRUCIBLE
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DIRECT NUMERICAL SIMULATION OF SI-MELT CONVECTION AND OXYGEN TRANSPORT IN A CZ-SYSTEM REAL GEOMETRY CRUCIBLE

机译:CZ系统实几何坩埚中SI熔体对流和氧传输的直接数值模拟

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摘要

Turbulent Si-melt convection, heat transfer and oxygen transport in a configuration typical for the industrial Czochralski crystal growth are numerically simulated. Computations using the full Navier-Stokes equations with no turbulence model have been carried out for the Rayleigh number of 5x10~5. Effects of crucible rotation on Si-melt convection and oxygen transport are investigated.
机译:数值模拟了工业Czochralski晶体生长中典型的湍流Si熔体对流,传热和氧气传输。对于5x10〜5的瑞利数,使用没有湍流模型的完整Navier-Stokes方程进行了计算。研究了坩埚旋转对硅熔体对流和氧气传输的影响。

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