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首页> 外文会议>International Conference on Surface Engineering; 20041029-31; Shenzhen(CN) >Effect of bias voltage on microstructure of DC magnetron sputtered Al coatings on uranium
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Effect of bias voltage on microstructure of DC magnetron sputtered Al coatings on uranium

机译：偏置电压对铀磁控溅射铝涂层的微观结构的影响

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摘要

The effect of different bias voltages on microstructure of Al coatings on uranium was investigated by u-sing scanning electron microscope (SEM), X-ray diffraction (XRD) and X-ray stress analyzer, respectively. The results indicate that the microstructure is influenced strongly by bias voltage. At low bias voltages, especially at —100 V, the structure of Al coatings is more densely packed than that at high bias voltages of —300 V and —400 V, where the structure looks like open dentritic. On the whole, the peak (111) orientation is predominant with the increase of bias voltage, but at —400 V, the diffractive intensity of main peaks (111) and (200) is close to the standard reference. The residual stress on Al coatings surface is small, which has a change from tensile to compressive stress with the increase of bias voltage.
机译：分别用扫描电子显微镜（SEM），X射线衍射（XRD）和X射线应力分析仪研究了不同偏压对铀铝涂层微观结构的影响。结果表明，微观结构受偏压的影响很大。在低偏置电压下（尤其是在-100 V时），Al涂层的结构比在-300 V和-400 V的高偏置电压下（其结构看起来像是树枝状的）密排得多。总体而言，峰（111）的取向主要随偏置电压的增加而变化，但在-400 V时，主峰（111）和（200）的衍射强度接近标准参考值。 Al涂层表面的残余应力很小，随着偏压的增加，其应力会从拉伸应力变为压缩应力。

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