• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>International Conference on Surface Engineering; 20041029-31; Shenzhen(CN) >Influence of bias on properties of carbon films deposited by MCECR plasma sputtering method
【24h】

Influence of bias on properties of carbon films deposited by MCECR plasma sputtering method

机译：偏压对MCECR等离子体溅射沉积碳膜性能的影响

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The mirror-confinement-type electron cyclotron resonance (MCECR) plasma source has high plasma density and high electron temperature. It is quite useful in many plasma processing, and has been used for etching and thin-film deposition. The carbon films with 40 nm thickness were deposited by MCECR plasma sputtering method on Si, and the influence of substrate bias on the properties of carbon films was studied. The bonding structure of the film was analyzed by the X-ray photoelectron spectroscopy(XPS), the tribological properties were measured by the pin-on-disk(POD) tribometer, the nanohardness of the films was measured by the nanoindenter, and the deposition speed and the refractive index were measured by the ellipse meter. The better substrate bias was obtained, and the better properties of carbon films were obtained.
机译：镜面约束型电子回旋共振（MCECR）等离子体源具有高等离子体密度和高电子温度。它在许多等离子体处理中非常有用，并已用于蚀刻和薄膜沉积。通过MCECR等离子溅射法在Si上沉积40 nm厚的碳膜，研究了衬底偏压对碳膜性能的影响。用X射线光电子能谱（XPS）分析膜的键合结构，用销钉盘式（Pod-on-disk）摩擦计测量摩擦性能，用纳米压头测量膜的纳米硬度，并沉积速度和折射率通过椭圆仪测量。获得了更好的衬底偏压，并且获得了更好的碳膜性能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号