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首页> 外文会议>International Symposium on Chemical and Biological Sensors and Analytical Methods II, 2001 >NO_2 SENSING PROPERTIES OF FET DEVICES ATTACHED WITH NaNO_2-BASED BINARY AUXILIARY PHASE
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NO_2 SENSING PROPERTIES OF FET DEVICES ATTACHED WITH NaNO_2-BASED BINARY AUXILIARY PHASE

机译：基于NaNO_2的二元辅助相连接的FET器件的NO_2传感特性。

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摘要

To improve the lower detection limit of FET type NO_2 sensor, its auxiliary phase (NaNO_2) was modified by the addition of small amounts of Ca-3(PO_4)_2 or WO_3. It was found that this modification resulted in a considerable improvement in N02 sensing characteristics. For example, the binary auxiliary phase of NaNO_2-Ca_3(PO_4)_2 (10:1 in molar ratio) or NaNO_2-WO_3 (5:1) could detect NO_2 down to 50 or 30 ppb at 150℃, respectively, while the unmodified one (NaNO_2) did down to 200 ppb. The response and recovery transients to NO_2 were also found to be improved significantly in the case of WO_3 addition. At the lower operating temperature of 130℃, the lower detection limit of the NaNO_2-WO_3 (5:1) attached device could be extended down to 10 ppb NO_2.
机译：为了提高FET型NO_2传感器的下限，通过添加少量的Ca-3（PO_4）_2或WO_3来修饰其辅助相（NaNO_2）。发现该修改导致NO 2感测特性的显着改善。例如，NaNO_2-Ca_3（PO_4）_2（摩尔比为10：1）或NaNO_2-WO_3（5：1）的二元辅助相可以在150℃下分别检测低至50或30 ppb的NO_2，而未改性一种（NaNO_2）降至200 ppb。在加入WO_3的情况下，还发现对NO_2的响应和恢复瞬变显着改善。在130℃的较低工作温度下，可以将附着的NaNO_2-WO_3（5：1）的检测下限扩展到10 ppb NO_2。

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