• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>International Symposium on Magnetic Industry(ISMI'04) amp; International Symposium on Physics and IT Industry(ISPITI'04); 20041004-08; Shenyang(CN) >Influence of Sb and B on Void Defects in Czochralski Grown Silicon
【24h】

Influence of Sb and B on Void Defects in Czochralski Grown Silicon

机译：Sb和B对Czochralski生长硅中空隙缺陷的影响

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The behavior of flow pattern defects (FPDs) in as-grown and RTA treated heavily Sb-doped wafers in the atmosphere of H_2 was investigated in this paper. The experimental results showed that FPDs density in heavily Sb-doped wafers was largely higher than that in B-doped wafers. The density of FPDs in heavily Sb-doped as-grown wafers was 17.5X10~6/cm~3, but the density of FPDs in lightly B-doped grown-in wafers was only 4.8X10~6/cm~3. After annealed with rapid thermal anneal (RTA) at 1150℃ for 10 min, the FPDs density in Sb-doped wafers decreased sharply. It became to 0.51 X 10~6/cm~3, and the density of FPDs in lightly B-doped grown-in wafers became to 0.41 X 10~6/cm~3. It attributed to that heavily doping Sb increased vacancy concentration and doping B decreased vacancy concentration. After annealed, the low concentration of oxygen and the out-diffusion oxygen accelerated the annihilation of void in Sb-doped wafers.
机译：本文研究了在H_2气氛下，生长和RTA处理的重掺杂Sb的晶圆中流型缺陷（FPD）的行为。实验结果表明，重掺杂Sb的晶圆的FPD密度大大高于掺B的晶圆。重掺杂Sb的成膜晶圆中FPD的密度为17.5X10〜6 / cm〜3，而轻掺杂B成膜的晶圆中FPD的密度仅为4.8X10〜6 / cm〜3。经过1150℃的快速热退火（RTA）退火10分钟后，掺Sb晶片中的FPDs密度急剧下降。其变为0.51×10 6 / cm 3，并且轻度掺杂B的成膜晶片中的FPD的密度变为0.41×10 6 / cm 3。这归因于重掺杂Sb增加了空位浓度，掺杂B降低了空位浓度。退火后，低浓度的氧气和向外扩散的氧气加速了掺Sb晶片中空隙的an灭。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号