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首页> 外文会议>International Symposium on Plasma Processing XIII, May 14-19, 2000, Toronto, Canada >LOW TEMPERATURE, PERMANENT MAGNET ELECTRON CYCLOTRON RESONANCE PLASMA DEPOSITION OF THERMALLY-STABLE AMORPHOUS SILICON AND SILICON NITRIDE
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LOW TEMPERATURE, PERMANENT MAGNET ELECTRON CYCLOTRON RESONANCE PLASMA DEPOSITION OF THERMALLY-STABLE AMORPHOUS SILICON AND SILICON NITRIDE

机译：高温非晶硅和氮化硅的低温永磁电磁回旋共振等离子体沉积

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摘要

Permanent magnet electron cyclotron resonance plasmas offer the ability to tailor magnetic field configurations to enhance uniformity by allowing the creation of a low magnetic field region covering a large fraction of the chamber volume. We report magnetic field design and modeling and plasma parameter uniformity for a system designed to process 200 to 300-mm-diameter substrates. SiN_x films have been deposited in this system with uniformity over a 200 mm diameter of <1.5% (max - min)/(2 mean). SiN_x films deposited at a deposition rate of 20 nm/min and with an index of refraction of ～1.89 have been evaluated for thermal stability by annealing in air at 350℃ for up to 45 mins. Following this anneal, film index of refraction is stable to better than 0.3%, indicating that these films are suitable for applications in optical devices demanding low thermal and lifetime drifts. Amorphous silicon films were also deposited. Hydrogen content as measured by FTIR decreases with annealing temperature. Film index of refraction is stable to <3% following anneals at up to 300℃.
机译：永磁电子回旋共振等离子体通过允许创建覆盖大部分腔室容积的低磁场区域，提供了定制磁场配置以增强均匀性的能力。我们报告了设计用于处理200至300 mm直径基板的系统的磁场设计和建模以及等离子体参数的均匀性。 SiN_x膜已在此系统中以200毫米的直径<1.5％（最大-最小）/（2均值）均匀沉积。通过在350℃的空气中退火45分钟，评估了以20 nm / min的沉积速率和〜1.89的折射率沉积的SiN_x膜的热稳定性。经过该退火处理后，薄膜的折射率稳定到优于0.3％，这表明这些薄膜适用于要求低热漂移和寿命漂移的光学器件。还沉积了非晶硅膜。通过FTIR测量的氢含量随退火温度降低。在最高300℃退火后，薄膜的折射率稳定在<3％。

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