CHARACTERIZATION OF n~+ μc-Si:H FOR TFTs FABRICATED AT 120℃ ON PLASTIC SUBSTRATES

机译：塑料基底上120℃下制备的TFT的n〜+μc-Si：H的表征

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The deposition process for heavily doped hydrogenated microcrystalline silicon (n~+ μc-Si:H) has been developed at 120℃ for use in thin film transistor (TFT) fabrication on plastic substrates. Film characteristics have been studied using grazing incidence x-ray diffraction (GIXD), Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy. The results show that, at high hydrogen dilution (99 %), power density of 75 mW/cm~2 and low deposition temperature (120℃), the film tends to become more crystalline with increasing deposition pressure from 250 to 900 mTorr. Preliminary optimization resulted in a maximum film crystallinity of 74%.

机译：在120℃下开发了重掺杂氢化微晶硅（n〜+μc-Si：H）的沉积工艺，用于在塑料基板上制造薄膜晶体管（TFT）。使用掠入射X射线衍射（GIXD），拉曼光谱和傅立叶变换红外（FTIR）光谱研究了薄膜的特性。结果表明，在高氢稀释度（99％），功率密度为75 mW / cm〜2和低沉积温度（120℃）下，随着沉积压力从250 mTorr增加到900 mTorr，薄膜趋于变得更加结晶。初步优化导致最大薄膜结晶度为74％。

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来源
《International Symposium on Plasma Processing XIII, May 14-19, 2000, Toronto, Canada》|2000年|p.42-47|共6页
会议地点 Toronto(CA);Toronto(CA)
作者
T. Charania; B. Park; A. Sazonov; D. Striakhilev; A. Nathan;
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University of Waterloo 200 University Avenue West Waterloo, ON N2L 3G1, Canada;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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CHARACTERIZATION OF n~+ μc-Si:H FOR TFTs FABRICATED AT 120℃ ON PLASTIC SUBSTRATES

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