Advanced plasma doping technique for USJ

著录项

• 来源
  《Junction Technology, 2009. IWJT 2009》|2009年|86-90|共5页
• 会议地点 Kyoto(JP);Kyoto(JP)
• 作者

  Godet L.; Papasouliotis G.D.; Kontos A.; Miller T.; Singh V.;

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• 作者单位

  Varian Semicond. Equip. Assoc., Inc., Gloucester, MA, USA;

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• 会议组织
• 原文格式 PDF
• 正文语种
• 中图分类
• 关键词

  CMOS logic circuits; doping profiles; electrical resistivity; incoherent light annealing; plasma immersion ion implantation; semiconductor doping; semiconductor junctions; USJ; advanced Logic CMOS devices; advanced plasma doping; dopant profile control; flash annealing; junction depth; n-type dopant precursors; profile abruptness; sheet resistance; source drain extension implants; ultra shallow junctions;

  机译：CMOS逻辑电路;掺杂轮廓;电阻率;非相干光退火;等离子体浸没离子注入;半导体掺杂;半导体结; USJ;先进的Logic CMOS器件;先进的等离子体掺杂;掺杂剂轮廓控制;快速退火;结深度; n型掺杂剂前体;轮廓突变;薄层电阻;源漏扩展注入;超浅结;