Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing instructions for

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• 来源
  《Junction Technology, 2009. IWJT 2009》|2009年|64-68|共5页
• 会议地点 Kyoto(JP);Kyoto(JP)
• 作者

  Bersani M.; Pepponi G.; Giubertoni D.; Gennaro S.; Sahiner M.A.; Kelty S.P.; Kah M.; Kirkby K.J.; Doherty R.; Foad M.A.; Meirer F.; Streli C.; Woicik J.C.; Pianetta P.;

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• 作者单位

  Fondazione Bruno Kessler, Center for Mater. Microsyst.-Irst, Trento, Italy;

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• 会议组织
• 原文格式 PDF
• 正文语种
• 中图分类
• 关键词

  EXAFS; Hall effect; arsenic; electrical resistivity; elemental semiconductors; ion implantation; laser beam annealing; rapid thermal annealing; secondary ion mass spectra; semiconductor doping; semiconductor epitaxial layers; semiconductor junctions; silicon; solid phase epitaxial growth; As junctions; RTP; SIMS; SPER; Si:As; active carrier doses; extended X-ray absorption fine structure; junction activation; junction deactivation; laser annealing; laser sub-melt annealing; nonequilibrium annealing; rapid thermal process;

  机译：EXAFS;霍尔效应;砷;电阻率;元素半导体;离子注入;激光束退火;快速热退火;二次离子质谱;半导体掺杂;半导体外延层;半导体结;硅;固相外延生长;作为结; RTP ; SIMS; SPER; Si：As;有效载流子剂量;扩展的X射线吸收精细结构;结激活;结失活;激光退火;激光亚熔退火;非平衡退火;快速热处理;