Abstract: Novel single block process facility including UVexcilamp and sources of atomic hydrogen is described.Circular sealed-off KrCl* excilamp emitting twointensive bands at 195 and 222 nm was used. The sourceof atomic hydrogen on the base of reflecting Penningarc discharge was placed in line with the lamp.Semiconducting structures were treated in an expandingeffusion jet of atomic hydrogen. The possibility torealize the process of cleaning GaAs surface underjoint action of atomic hydrogen and UV radiation hasbeen investigated. Effect of UV radiation on the rateof removing oxide layer is found at low temperature (18- 100$DGR@C). The mechanism providing an explanationfor this event is suggested. The possibility to realizeGaAs surface cleaning using successive performing theprocedures of the surface treatment by atomic hydrogen,its oxidation with UV- stimulation and additionaltreatment by atomic hydrogen was also studied. Thesources of atomic hydrogen and UV radiation developedallows to improve cleaning control and provides a wayof producing the surface with specified properties.!14
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