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首页> 外文会议>Laser Applications in Microelectronic and Optoelectronic Manufacturing III >Laser writing of quantum well intermixed GaInAsP/InP microstructures
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Laser writing of quantum well intermixed GaInAsP/InP microstructures

机译：量子阱混合GaInAsP / InP微观结构的激光写入

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Abstract: Laser-induced intermixing of quantum well (QW) and barrier material has been studied in GaInAsP/InP laser heterostructures grown by chemical beam epitaxy. Samples were exposed to CW Nd:YAG laser radiation for 7.5 to 300 sec with power densities in the range of 3 to 9 W/mm$+2$/. With a laser beam tightly focused on the surface, this approach has the potential to `write' lines of arbitrary shapes of quantum well intermixed material. A 90 nm blue shift of the QW PL peak was demonstrated in the material processed with a triple pass of the 7.5 W/mm$+2$/ laser beam. This result has been achieved with a writing speed of 20 $mu@m/s. The influence of laser power, dwell time per pass and total irradiation time of the Nd:YAG laser beam on the extent of the blue shift and the optical properties of GaInAsP-based quantum well structures were investigated.!17
机译：摘要：在通过化学束外延生长的GaInAsP / InP激光异质结构中，研究了激光诱导的量子阱（QW）和势垒材料的混合。将样品暴露于CW Nd：YAG激光辐射下7.5至300秒，功率密度范围为3至9 W / mm $ + 2 $ /。通过将激光束紧紧聚焦在表面上，这种方法有可能“写入”任意形状的量子阱混合材料的线。在通过7.5 W / mm $ + 2 $ /激光束的三次通过处理的材料中，证明了QW PL峰发生90 nm蓝移。写入速度为20 $ mu @ m / s时，可以达到此结果。研究了Nd：YAG激光束的激光功率，单程停留时间和总照射时间对蓝移的程度和基于GaInAsP的量子阱结构的光学性能的影响！17

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