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Phased 2D semiconductor laser array for high coherent output power

机译:相控2D半导体激光器阵列可实现高相干输出功率

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Abstract: per describes phasing of semiconductor laser arrays placed in an external Talbot cavity for high coherent output power. The external Talbot cavity couples the light between many adjacent lasers such that all lasers operate at the same frequency and phase, resulting in a high power diffraction limited output beam. We first verified the concepts of the Talbot cavity exploiting a simple 1-D Talbot cavity with 20 elements and demonstrated over 600 mW cw total output power in a diffraction limited output beam. In order to fabricate a highly scalable 2-D phased array of lasers, a new type of monolithic 2-D surface emitter was developed for the 2-D Talbot cavity. We have demonstrated 50 W cw output power from a nonphased 2-D monolithic surface emitting laser array with 1500 laser elements. Finally, using a similar 2- D 12 by 12 element surface emitting laser array, we demonstrated 2-D coherence from a compact 2-D Talbot cavity which includes a GaP mass transport lens array, a liquid crystal array and a phase sensing and control system.!19
机译:摘要:每篇文章描述了放置在外部Talbot腔中以实现高相干输出功率的半导体激光器阵列的相位。外部Talbot腔将光耦合到许多相邻激光器之间,从而使所有激光器都以相同的频率和相位工作,从而导致高功率衍射受限的输出光束。我们首先利用具有20个元素的简单一维Talbot腔验证了Talbot腔的概念,并在衍射受限的输出光束中演示了600 mW cw的总输出功率。为了制造高度可扩展的2-D相控激光器阵列,针对2-D Talbot腔开发了一种新型的单片2-D表面发射器。我们已经证明了具有1500个激光元件的无相2-D单片表面发射激光器阵列的50 W cw输出功率。最后,我们使用类似的2-D 12 x 12元件表面发射激光器阵列,从紧凑的2-D Talbot腔中演示了2-D相干性,该腔包含GaP传质透镜阵列,液晶阵列以及相位感测和控制系统!! 19

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