Measurement of relative intensity noise of semiconductor laser arrays

机译：半导体激光器阵列的相对强度噪声的测量

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Abstract: rt in this paper the measurement results of the relative intensity noise (RIN) in GaAs-AlGaAs laser arrays, comparing with that of single stripe lasers. The results are in agreement with the noise theory based on the rate equation. The experimental measurements include dependence of relative intensity noise on drive current, modulation frequency and temperature. The results confirm in these circumstances the theoretical prediction that the maximum of the relative intensity noise occurs when the lasers run exactly at their threshold current level.!15

机译：摘要：本文将GaAs-AlGaAs激光器阵列中相对强度噪声（RIN）的测量结果与单条激光器进行了比较。结果与基于速率方程的噪声理论相符。实验测量包括相对强度噪声对驱动电流，调制频率和温度的依赖性。这些结果在这些情况下证实了理论上的预测，即当激光器恰好在其阈值电流水平下运行时，会出现最大相对强度噪声！15

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来源
《Laser Diode Technology and Applications V》|1993年|p.372-375|共4页
会议地点 Los Angeles CA(US)
作者
Jingchang Zhong; Univ. of New Mexico; Albuquerque; NM; USA; Baoren Zhu; Changchun Institute of Optics; Fine Mechanics; Changchun; Jilin; China; Ronghui Li; Changchun Institute of Optics; Fine Mechanics; Changchun; Jilin; China; Yingjie Zhao; Changchun Insti;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. Relative intensity noise measurements of 5 ;C;m quantum cascade laser and 1.55 ;C;m semiconductor laser [J] . Takagi Y., Kumazaki N., Ishihara M., Electronics Letters . 2008,第14期

机译：5; C; m量子级联激光器和1.55; C; m半导体激光器的相对强度噪声测量
2. Relative intensity noise measurements of 5 μm quantum cascade laser and 1.55 μm semiconductor laser [J] . Y. Takagi, N. Kumazaki, M. Ishihara, Electronicsletters . 2008,第14期

机译：5μm量子级联激光器和1.55μm半导体激光器的相对强度噪声测量
3. Measurements of Longitudinal Linewidth and Relative Intensity Noise in Ultrahigh-Speed Mode-Locked Semiconductor Lasers [J] . Kentaro Haneda, Masato Yoshida, Hiroyuki Yokoyama, Electronics and Communications in Japan. Part 2, Electronics . 2006,第2期

机译：超高速锁模半导体激光器的纵向线宽和相对强度噪声的测量
4. Measurement of relative intensity noise of semiconductor laser arrays [C] . Jingchang Zhong, Baoren Zhu, Ronghui Li, Conference on laser diode technology and applications . 1993

机译：半导体激光器阵列相对强度噪声的测量
5. Signal modulation and relative intensity noise properties of transistor laser and nano-cavity VCSEL [D] . Tan, Fei. 2013

机译：晶体管激光器和纳米腔VCSEL的信号调制和相对强度噪声特性
6. Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers [O] . Moustafa Ahmed -1

机译：InGaN半导体激光器中强度噪声的理论建模
7. Modeling of relative intensity noise and terminal electrical noise of semiconductor lasers using artificial neural network [O] . A. Rezaei, L. Noori 2016

机译：使用人工神经网络对半导体激光器的相对强度噪声和终端电噪声进行建模
8. Measurements of Noise and Signal-to-Noise Ratio for a Coherent SemiconductorLaser Radar (Maetningar av Brus och Signal-Brusfoerhallande foer en Koherent Halvledar Laserradar) [R] . Karlsson, C., Letalick, D., Renhorn, I. 1996

机译：相干半导体激光雷达的噪声和信噪比测量（maetningar av Brus och signal-Brusfoerhallande foer en Koherent Halvledar Laserradar）

Measurement of relative intensity noise of semiconductor laser arrays

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