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首页> 外文会议>Laser Diode Technology and Applications V >Efficient high-power monolithic two-dimensional surface-emitting diode laser arrays mounted in the junction-down configuration
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Efficient high-power monolithic two-dimensional surface-emitting diode laser arrays mounted in the junction-down configuration

机译：以结向下配置安装的高效大功率单片二维面发光二极管激光器阵列

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Abstract: ew in-plane surface-emitting laser diode arrays and their applications. Efficient operation of monolithic, large area (0.54 cm$+2$/, 108 emitters) two-dimensional surface-emitting GaAlAs laser diode arrays mounted junction-down on microchannel heat exchangers has been demonstrated. Devices with 1.5 $mu@m thick cladding layers were operated quasi-continuous-wave to high peak output power densities ($GRT 100 W/cm$+2$/), exhibited high power conversion efficiencies (22%), and full width emission spectra of $LS 4 nm at 2% - 5% duty cycles. Arrays with a 2.5 $mu@m thick cladding region were operated under continuous wave conditions to 46 W/cm$+2$/ power density levels. This corresponded to a 550 W/cm$+2$/ heat flux extracted by microchannel heat exchanges.!10
机译：摘要：ew面内发射激光二极管阵列及其应用。已经证明了在结点向下安装在微通道热交换器上的单片大面积（0.54 cm $ + 2 $ /，108个发射器）二维表面发射GaAlAs激光二极管阵列的高效运行。具有1.5μm@m厚包层的器件以准连续波方式运行到高峰值输出功率密度（$ GRT 100 W / cm $ + 2 $ /），表现出高功率转换效率（22％），并且全宽在2％-5％占空比下$ LS 4 nm的发射光谱。具有2.5μm厚的覆层区域的阵列在连续波条件下以46W / cm $ + 2 $ /功率密度水平工作。这相当于通过微通道热交换提取的550 W / cm $ + 2 $ /热通量！10

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