首页> 外文会议>Laser optics 2010 >2 μm InGaSb/GaSb laterally coupled distributed feedback laser fabricated by nanoimprint lithography
【24h】

2 μm InGaSb/GaSb laterally coupled distributed feedback laser fabricated by nanoimprint lithography

机译:纳米压印光刻技术制备的2μmInGaSb / GaSb横向耦合分布式反馈激光器

获取原文
获取原文并翻译 | 示例

摘要

We report the development of a nanoimprint lithography patterning method and inductively coupled plasma etching recipe designed for GaSb-based semiconductor materials. The developed processes were used to fabricate edge-emitting ridge-waveguide lasers and laterally-coupled distributed feedback lasers operating at 1945 nm. For ridge-waveguide laser with 1 mm cavity length, a threshold current of 32 mA was measured. Side-mode suppression ratio in excess of 30 dB was measured for the distributed feedback lasers with 2 mW output power and the output wavelength was temperature-tunable with a tuning coefficient of 0.16 nm / ℃.
机译:我们报告了为基于GaSb的半导体材料设计的纳米压印光刻图案化方法和电感耦合等离子体刻蚀配方的发展情况。所开发的工艺用于制造边缘发射的脊形波导激光器和工作在1945 nm的横向耦合分布反馈激光器。对于腔长为1 mm的脊形波导激光器,其阈值电流为32 mA。对于输出功率为2 mW的分布式反馈激光器,测得的侧模抑制比超过30 dB,并且输出波长是温度可调的,调谐系数为0.16 nm /℃。

著录项

  • 来源
    《Laser optics 2010》|2010年|p.782208.1-782208.6|共6页
  • 会议地点 St. Petersburg(RU)
  • 作者单位

    Optoelectronics Research Centre, Tampere University of Technology, P. O. Box 692, FIN-33101 Tampere, Finland;

    Optoelectronics Research Centre, Tampere University of Technology, P. O. Box 692, FIN-33101 Tampere, Finland;

    Optoelectronics Research Centre, Tampere University of Technology, P. O. Box 692, FIN-33101 Tampere, Finland;

    Optoelectronics Research Centre, Tampere University of Technology, P. O. Box 692, FIN-33101 Tampere, Finland;

    Optoelectronics Research Centre, Tampere University of Technology, P. O. Box 692, FIN-33101 Tampere, Finland;

    Optoelectronics Research Centre, Tampere University of Technology, P. O. Box 692, FIN-33101 Tampere, Finland;

    Optoelectronics Research Centre, Tampere University of Technology, P. O. Box 692, FIN-33101 Tampere, Finland;

    Department of Physics and Optics, University of Eastern Finland, Joensuu Campus, P. O. Box 111, FIN-80101 Joensuu, Finland;

    Optoelectronics Research Centre, Tampere University of Technology, P. O. Box 692, FIN-33101 Tampere, Finland;

    Optoelectronics Research Centre, Tampere University of Technology, P. O. Box 692, FIN-33101 Tampere, Finland;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 激光技术、微波激射技术;
  • 关键词

    gallium antimonide; gasb; distributed feedback; dfb; laser; nanoimprint lithography; nil;

    机译:锑化镓气分布式反馈; dfb;激光;纳米压印光刻;零;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号