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Advances in AlGaInN laser diode technology for defence applications

机译：用于国防应用的AlGaInN激光二极管技术的进展

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摘要

The latest developments in AlGalnN laser diode technology are reviewed. The AlGalnN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v. to the visible, i.e., 380-530nm, by tuning the indium content of the laser GalnN quantum well. Of specific interest for defence applications is blue-green laser diode technology for underwater telecommunications and sensing applications. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of ＞100mW in the 400-420nm wavelength range with high reliability. Low defectivity and highly uniform GaN-substrates allow arrays and bars of nitride lasers to be fabricated. In addition, high power operation of AIGalnN laser diodes is demonstrated with the operation of a single chip, 'mini-array' consisting of a 3 stripe common p-contact at powers up to 2.5W cw in the 408-412 nm wavelength range and a 16 stripe common p-contact laser array at powers over 4W cw.
机译：回顾了AlGalnN激光二极管技术的最新发展。 AlGalnN材料系统允许在非常宽的紫外线波长范围内制造激光二极管。通过调节激光GalnN量子阱的铟含量达到可见光，即380-530nm。国防应用特别感兴趣的是用于水下电信和传感应用的蓝绿色激光二极管技术。脊形波导激光二极管结构经制造可在400-420nm波长范围内以大于100mW的光功率实现单模工作，并且具有很高的可靠性。低缺陷率和高度均匀的GaN衬底允许制造氮化物激光器的阵列和棒。此外，AIGalnN激光二极管的高功率操作还通过单芯片“微型阵列”的操作进行了演示，该微型阵列由3条纹公共p触点组成，在408-412 nm波长范围内的功率高达2.5W cw，并且一个16条纹的普通p接触激光器阵列，功率超过4W cw。

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  • 来源
    《Laser technology for defense and security IX》|2013年|873302.1-873302.8|共8页
  • 会议地点 Baltimore MD(US)
  • 作者

    S.P. Najda; P. Perlin; T. Suski; L. Marona; M. Bockowski; M. Leszczynski; A.Kafar; S.Stanczyk; P. Wisniewski; R. Czernecki; R. Kucharski; G. Targowski;

  • 作者单位

    TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland,Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland,Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland,Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland,Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland,Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    Ammono S.A., Czerwonego Krzyz'a 2/31, 00-377 Warsaw, Poland;

    TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    GaN laser; GaN array;

    机译：氮化镓激光器氮化镓阵列;

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