Characterization of SiC and Al

机译：SiC和Al的表征

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ceramics were produced with 0.15 wt% MgO. All samples were sanded and polished by using the same process. The ceramics received an average of 1440 plasma pulses with discharges made at equal intervals of 20 minutes, using nitrogen as carrier gas. The use of this innovative plasma technique produced significant changes on the SiC ceramics surface. On the other hand, the alumina ceramics, that have dielectric characteristics, showed slight change after exposure to a plasma expander.

机译：用0.15wt％的MgO生产陶瓷。使用相同的方法对所有样品进行打磨和抛光。使用氮气作为载气，陶瓷平均接收1440个等离子脉冲，并以20分钟的相等间隔放电。这种创新的等离子技术的使用使SiC陶瓷表面发生了重大变化。另一方面，具有介电特性的氧化铝陶瓷在暴露于等离子体膨胀剂之后显示出轻微的变化。

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来源
《Latin American Workshop on Plasma Physics》|2017年|5-11|共7页
会议地点 Mexico City(MX)
作者
Mauricio A. Algatti; Carlos N. Santos; Rogério P. Mota; Elson de Campos; Emerson F. Lucena; Munemasa Machida; Francisco C. L. Melo;
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Departamento de Física e Química UNESP-Universidade Estadual Paulista Guaratinguetá Brazil;

Departamento de Física e Química UNESP-Universidade Estadual Pauli;

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alumina; ceramics; hot pressing; plasma materials processing; silicon compounds; sintering; wetting; wide band gap semiconductors; Z pinch;

机译：氧化铝陶瓷;热压等离子材料加工；硅化合物;烧结;润湿宽带隙半导体； Z夹;

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1. 表面改性SiC颗粒增强Al基复合材料的制备与表征 [J] . 吕品回, 王小锋, 董翠鸽, 中南大学学报（英文版） . 2020,第009期
2. Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950 degrees C Post Implantation Annealing [J] . Nipoti Roberta, Parisini Antonella, Sozzi Giovanna, ECS Journal of Solid State Science and Technology . 2016,第10期

机译：1950℃注入后退火的Al +注入4H-SiC层和Al +注入4H-SiC p-n结的结构和功能表征
3. Ti_3SiC_2-(Ti_3SiC_2-SiC) functionally graded materials by spark plasma sintering reactive synthesis method Part 2 - fabrication and characterization [J] . W. Jiang, J. F. Zhang, L J. Wang Materials Technology . 2010,第5期

机译：火花等离子体烧结反应合成方法制备Ti_3SiC_2-（Ti_3SiC_2-SiC）功能梯度材料第2部分-制备与表征
4. Characterization of SiC_f/SiC and CNT/SiC composite materials produced by liquid phase sintering [J] . Lee J.K., Lee S.P., Cho K.S., Journal of Nuclear Materials: Materials Aspects of Fission and Fusion . 2011,第1a3期

机译：液相烧结制备SiC_f / SiC和CNT / SiC复合材料的表征
5. PREPARATION AND CHARACTERIZATION OF MAGNESIUM-SILICON BASED OXIDE COATING ON HIGH-CRYSTALLINE SiC FIBER AS AN INTERPHASE IN SiC/SiC COMPOSITE [C] . International conference on advanced ceramics and composites . 2005

机译：高晶体纤维镁基氧化硅氧化物涂层的制备与表征，如SiC / SiC复合材料中的间相互作用
6. Electrical passivation of 6H-alpha SiC by thermal oxidation and its characterization and application in SiC MOSFETs. [D] . Kang, Soon Won. 1996

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7. RF Sputtering Post-Annealing Treatment and Characterizations of ZnO (002) Thin Films on 3C-SiC (111)/Si (111) Substrates [O] . Visakh Valliyil Sasi, Abid Iqbal, Kien Chaik, 2017

机译：在3C-SiC（111）/ Si（111）基板上进行ZnO（002）薄膜的RF溅射退火后处理和表征
8. Structural and functional characterizations of Al+ implanted 4H-SiC layers and al+ implanted 4H-SiC p-n junctions after 1950°C post implantation annealing [O] . Nipoti Roberta, Parisini Antonella, Sozzi Giovanna, 2016

机译：1950°C注入后退火后的Al +注入4H-SiC层和Al +注入4H-SiC p-n结的结构和功能表征

Characterization of SiC and Al

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