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首页> 外文会议>Light-Emitting Diodes: Research, Manufacturing, and Applications XI; Proceedings of SPIE-The International Society for Optical Engineering; vol.6486 >Non-Periodic Binary Optical Structures for Enhancing Light Extraction of Emitters
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Non-Periodic Binary Optical Structures for Enhancing Light Extraction of Emitters

机译：用于增强发射极光提取的非周期性二元光学结构

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摘要

This paper presents a new method of designing binary optical structures to improve light extraction efficiency for emitters. Using this method a novel binary optical structure is generated. Such structures with an approximate width of 300 nm, are non-period and small enough in size so that they do not generate diffraction orders other than the zero order. They are also insensitive to polarization. They serve as an antireflection layer, sending light outward that would otherwise be absorbed within the device. The experimental devices were GaN based LEDs emitting at 460nm. The non-periodic binary structures and some periodic structures such as triangle-lattice Photonic Crystals (PC), 12-fold Quasi-periodic Photonic Crystals (QPC) are fabricated on the same sapphire side of a LED's flip chip with a Focus Ion Beam (FIB) for comparison. The surface profile of the structures was analyzed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Near field scanning optical microscopy (NSOM) was used to measure the output spectral properties of the devices. Electrical Luminescence (EL) measurements show that the greatest enhancement of emission light intensity was achieved in non-periodic binary structures. This increase was 60～135% at room temperature. It demonstrates that this Non-Periodic Binary Optical Structures will be useful for fabricating high efficient GaN-based LED.
机译：本文提出了一种设计二元光学结构以提高发射器光提取效率的新方法。使用这种方法，产生了新颖的二元光学结构。这种具有大约300nm的宽度的结构是非周期的并且尺寸足够小，使得它们不产生除零级之外的衍射级。它们也对极化不敏感。它们用作抗反射层，向外发送光，否则该光会在设备内被吸收。实验设备是发射460nm的GaN基LED。非周期性二元结构和一些周期性结构（例如三角形晶格光子晶体（PC），12倍准周期性光子晶体（QPC））在具有聚焦离子束（ FIB）进行比较。通过扫描电子显微镜（SEM）和原子力显微镜（AFM）分析结构的表面轮廓。近场扫描光学显微镜（NSOM）用于测量设备的输出光谱特性。电致发光（EL）测量表明，在非周期性二元结构中实现了最大的发射光强度增强。在室温下该增加为60〜135％。它证明了这种非周期性的二元光学结构将可用于制造高效的基于GaN的LED。

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