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首页> 外文会议>Materials for energy conversion and storage >Effect of Annealing Treatment on Electrical and Optical Properties of ATO Thin Films by Pulsed Laser Deposition
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Effect of Annealing Treatment on Electrical and Optical Properties of ATO Thin Films by Pulsed Laser Deposition

机译：脉冲激光沉积退火处理对ATO薄膜电学和光学性能的影响

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摘要

Transparent conducting antimony doped tin oxide (ATO) films have been prepared on quartz glass substrate by pulsed laser deposition (PLD) method which is distinctive to maintain the elemental components between the targets and the obtained thin films under optimal conditions. The effect of annealing temperature on the electrical and optical properties of the ATO thin films has been discussed. The annealing treatments have been often employed to reduce the defects and enlarge the grain size for more desirable crystalline structure. As the annealing temperature increases, the ATO thin films exhibited a slightly enhanced crystallinity. Furthermore, annealing treatment can promote both conductivity and transmittance significantly, especially for conductivity. The X-ray photoelectron spectroscopy is used to explore the variation of Sb~(5+)/Sb~(3+) ratio against the annealing temperature. The optimal resistivity is 2.7×10~(-3) Ω cm and the average transmittance is about 92% at annealing temperature of 550℃.
机译：已通过脉冲激光沉积（PLD）方法在石英玻璃基板上制备了透明导电锑掺杂氧化锡（ATO）膜，该膜的独特之处在于可以在最佳条件下将靶材和所得薄膜之间的元素组分保持在适当的位置。讨论了退火温度对ATO薄膜的电学和光学性能的影响。退火处理经常被用来减少缺陷并扩大晶粒尺寸以获得更理想的晶体结构。随着退火温度的升高，ATO薄膜的结晶度略有提高。此外，退火处理可以显着提高电导率和透射率，特别是对于电导率而言。利用X射线光电子能谱研究了Sb〜（5 +）/ Sb〜（3+）比随退火温度的变化。最佳电阻率为2.7×10〜（-3）Ωcm，在550℃的退火温度下平均透射率约为92％。

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  • 来源
  • 会议地点 Shenzhen(CN)
  • 作者

    Fei Chen; Na Li; Qiang Shen; Chuanbin Wang; Lianmeng Zhang;

  • 作者单位

    State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;

    State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;

    State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;

    State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;

    State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    antimony doped tin oxide; pulsed laser deposition; electrical properties; optical properties; annealing temperature;

    机译：锑掺杂的氧化锡脉冲激光沉积电性能；光学性质退火温度;

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