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首页> 外文会议>Materials science and technology VII >Optical Band Gaps and Electrical Conductance of Si nanocrystals in SiO_2 Matrix for Optoelectronic Applications
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Optical Band Gaps and Electrical Conductance of Si nanocrystals in SiO_2 Matrix for Optoelectronic Applications

机译：光电应用中SiO_2基体中Si纳米晶体的光学带隙和电导率

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In this study, silicon nanocrystal (Si-nc) films were synthesized by compositing of Si-nc powder embedded in silicon oxide phase. The Si-nc film produced by the spin-coating methode using Tetraethylorthosilicate, ethanol, phosphoric acid, and Si-nc powder as suspension precursors. The variation in structural and optical properties of Si-nc sol films with the amounts of Si-nc powder have been characterized. Atomic force microscopy (AFM) shows that low density level of Si-nc power can result in the amount of porosity in the Si-nc films. It is found that when the Si-nc films have the higher Si-nc density, the small pores in the SiO_2 phase were removed. In addition, optical energy gap (Eg) of Si-nc samples was evaluated by the Tauc plot method. It is a crucial attribute for a promising photonic device. The obtained optical bang gap values were extended from 1.10 eV to 1.40 eV as compared with the typical Si bulk. In addition, density of Si-nc clusters has a considerable effect on the electrical conductance of the Si-nc films measured at room temperature.
机译：在这项研究中，通过嵌入在氧化硅相中的Si-nc粉末的合成合成了硅纳米晶体（Si-nc）膜。通过使用原硅酸四乙酯，乙醇，磷酸和Si-nc粉末作为悬浮液前驱体，通过旋涂法制备的Si-nc膜。已经表征了Si-nc溶胶膜的结构和光学性质随Si-nc粉末的量的变化。原子力显微镜（AFM）表明，低密度的Si-nc功率可以导致Si-nc膜中的孔隙率。发现当Si-nc膜具有较高的Si-nc密度时，SiO_2相中的小孔被去除。另外，通过Tauc图法评估了Si-nc样品的光能隙（Eg）。对于有前途的光子器件，这是至关重要的属性。与典型的Si块相比，获得的光学棒间隙值从1.10eV扩展到1.40eV。另外，Si-nc簇的密度对在室温下测量的Si-nc膜的电导率具有显着影响。

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