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首页> 外文会议>Mechanical properties and performance of engineering ceramics and composites IX >FABRICATION OF SiC FIBER-REINFORCED SiC MATRIX COMPOSITES BY LOW TEMPERATURE MELT INFILTRATION METHOD USING Si-Hf AND Si-Y ALLOY
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FABRICATION OF SiC FIBER-REINFORCED SiC MATRIX COMPOSITES BY LOW TEMPERATURE MELT INFILTRATION METHOD USING Si-Hf AND Si-Y ALLOY

机译：Si-Hf和Si-Y合金的低温熔体浸渗法制备SiC纤维增强SiC基复合材料

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摘要

The melt infiltration (MI) method is one of the attractive fabrication methods of SiC_f/SiC composites. In this study, Si-8.5 at.%Hf alloy and Si-18 at.%Y alloy, which shows lower melting temperature, were used for the fabrication of SiC_f/SiC composites by the MI method. The melting temperature was lowered to 1375-1390℃ using Si-8.5 at.%Hf alloy. The final matrix consisted of Si, SiC and HfSi_2. Three-point bending strength of the SiC_f/SiC composite using Si-Hf alloy heated at 1375℃ was about 590 MPa, and this value was higher than that of SiC_f/SiC composite using Si-Hf and Si heating at 1450℃. Moreover, the melting temperature was lowered to 1290℃ using Si-18 at.%Y alloy. The final matrix consisted of Si, SiC and Y_3Si_5. Three-point bending strength of the SiC_f/SiC composite using Si-Y alloy fabricated by MI at 1340℃ was about 600 MPa, which is slightly higher than that of SiC_f/SiC composite using Si-8.5 at.%Hf alloy heated at 1375℃. SiC_f/SiC composites using Si-Y alloy heated at 1290℃ have open porosity of 8%, and the bending strength of SiC_f/SiC composite heated at 1290℃ was lower than SiC_f/SiC composite fabricated at 1340℃.
机译：熔体渗透法（MI）是SiC_f / SiC复合材料的一种有吸引力的制造方法。在这项研究中，采用较低的熔化温度的Si-8.5 at。％Hf合金和Si-18 at.YY合金通过MI方法制造SiC_f / SiC复合材料。使用Si-8.5 at。％Hf合金将熔融温度降至1375-1390℃。最终基质由Si，SiC和HfSi_2组成。在1375℃下加热的Si-Hf合金的SiC_f / SiC复合材料的三点弯曲强度约为590 MPa，该值高于在1450℃下加热Si-Hf和Si的SiC_f / SiC复合材料的三点弯曲强度。此外，使用Si-18 at。％Y合金将熔化温度降至1290℃。最终基质由Si，SiC和Y_3Si_5组成。 MI在1340℃下制造的使用Si-Y合金的SiC_f / SiC复合材料的三点弯曲强度约为600 MPa，比在1375年加热的使用Si-8.5 at。％Hf合金的SiC_f / SiC复合材料的三点弯曲强度稍高。 ℃。使用1290℃加热的Si-Y合金制成的SiC_f / SiC复合材料的开孔率为8％，而1290℃加热的SiC_f / SiC复合材料的弯曲强度低于1340℃制备的SiC_f / SiC复合材料。

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  • 会议地点 Daytona Beach FL(US)
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    Yosuke Okubo; Toyohiko Yano; Katsumi Yoshida; Takuya Aoki; Toshio Ogasawara;

  • 作者单位

    Department of Nuclear Engineering, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo, 152-8550 Japan;

    Research Laboratory for Nuclear Reactors, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo, 152-8550 Japan;

    Research Laboratory for Nuclear Reactors, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo, 152-8550 Japan;

    Japan Aerospace Exploration Agency (JAXA), 7-44-1, Jindaizihigashimachi, Chofu-shi, Tokyo, 182-0012 Japan;

    Japan Aerospace Exploration Agency (JAXA), 7-44-1, Jindaizihigashimachi, Chofu-shi, Tokyo, 182-0012 Japan;

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