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A one step annealing for dopants activation, silicide resistivity lowering and glass flow by rapid thermal processing

机译：通过快速热处理进行一步退火，以激活掺杂剂，降低硅化物电阻率并降低玻璃流量

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A method to achieve titanium silicide resistivity lowering, dopants activation, and glass reflow in a one-step rapid thermal annealing (RTA) was developed with the objective of minimizing the thermal degradation of the silicide layer. It is found that the resistivity of TiSi/sub 2/ after high-temperature RTA essentially depends on whether or not the surface layer, which is formed during the first RTA in nitrogen ambient, was selectively removed before PSG deposition and reflow. With this protection film, a sheet resistance lower than 2 Omega /square. On the gate and diffusion areas was obtained. Without it, a considerable resistivity increase is observed. The barrier effect of this nitride layer is believed to be primarily responsible for this better stability. The efficiency of the method is demonstrated in a 1.5- mu m polycide process.
机译：为了最小化硅化物层的热降解，开发了一种在一步式快速热退火（RTA）中实现硅化钛电阻率降低，掺杂剂活化和玻璃回流的方法。发现在高温RTA之后TiSi / sub 2 /的电阻率基本上取决于在PSG沉积和回流之前是否选择性地去除了在氮环境中的第一次RTA期间形成的表面层。通过该保护膜，薄层电阻低于2Ω/平方。在栅极和扩散区域上获得。没有它，观察到电阻率显着增加。该氮化物层的阻挡作用被认为是造成这种更好稳定性的主要原因。该方法的效率在1.5微米的多杀菌剂工艺中得到了证明。

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