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Design of pcladding layer for low threshold long-wavelength surface-emitting lasers

机译：低阈值长波长面发射激光器的熔覆层设计

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《》|1995年||共1页
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Miyamoto; T.; Takada; T.;
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中图分类无线电电子学、电信技术;
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1. Efficient double intracavity-contacted vertical-cavity surface-emitting lasers with very low-threshold and low-power dissipation designed for cryogenic applications [J] . Kai Yang, Hains C.P. IEEE Photonics Technology Letters . 2000,第2期

机译：专为低温应用而设计的高效双腔内接触垂直腔面发射激光器，具有极低的阈值和低功耗
2. Improved Mode Stability of Long-Wavelength GaInAsN Vertical-Cavity Surface-Emitting Lasers by Using the Selective Ge-Coating Layer [J] . Tsai CL, Huang JC, Chou YL, Electrochemical and solid-state letters . 2009,第12期

机译：通过使用选择性Ge涂层提高长波长GaInAsN垂直腔面发射激光器的模式稳定性
3. Low threshold, room temperature pulsed operation of 1.5 /spl mu/m vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer [J] . Uomi K., Yoo S.J.B. IEEE Photonics Technology Letters . 1994,第3期

机译：具有优化的多量子阱有源层的1.5 splμm/ m垂直腔面发射激光器的低阈值室温脉冲操作
4. Design of pcladding layer for low threshold long-wavelength surface-emitting lasers [C] . Miyamoto T., Takada T., Institute of Electric and Electronic Engineer international conference on lasers and electro-optics in the Asia Pacific . 1995

机译：低阈值长波长表面发射激光器的PCLAD层设计
5. Design and fabrication of long-wavelength vertical-cavity surface-emitting lasers using wafer bonding technologies. [D] . Lin, Hung-Cheng. 2002

机译：利用晶片键合技术设计和制造长波长垂直腔面发射激光器。
6. Effect of Hole Shift on Threshold Characteristics of GaSb-Based Double-Hole Photonic-Crystal Surface-Emitting Lasers [O] . Yu-Hsun Huang, Zi-Xian Yang, Su-Ling Cheng, 2021

机译：空穴变化对基于气泡的双孔光子晶体表面发射激光器的阈值特性的影响
7. Low threshold, room temperature pulsed operation of 1.5 μm vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer [O] . Uomi K., Yoo S. J. B., Scherer A., 1994

机译：具有优化的多量子阱有源层的1.5μm垂直腔面发射激光器的低阈值，室温脉冲操作
8. Ultra-Low Threshold Vertical-Cavity Surface-Emitting Lasers for USAF Applications [R] . Nelson, T. R. 2005

机译：用于美国空军应用的超低阈值垂直腔面发射激光器

Design of pcladding layer for low threshold long-wavelength surface-emitting lasers

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