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Novel gain cell with ferroelectric coplanar capacitor for high-density nonvolatile random-access memory

机译：具有铁电共面电容器的新型增益单元，用于高密度非易失性随机存取存储器

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摘要

The authors propose a new nonvolatile gain memory cell in which one individual cell is selected by using only two wires. The proposed cell surpasses conventional DRAMs and FeRAMs in terms of cell area and speed. It can be implemented by adding a planar ferroelectric film and a single electrode layer to the conventional CMOS process. Thus, it offers a viable way of providing ferroelectric nonvolatile memory functions using existing CMOS technology.

机译：作者提出了一种新的非易失性增益存储单元，其中仅通过使用两条线来选择一个单独的单元。所提出的单元在单元面积和速度方面都超过了传统的DRAM和FeRAM。可以通过在常规CMOS工艺中添加平面铁电膜和单个电极层来实现。因此，它提供了一种使用现有CMOS技术提供铁电非易失性存储功能的可行方法。

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《》|1997年|P.942-944|共3页
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Aoki; M.; Takauchi; H.;
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中图分类无线电电子学、电信技术;
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1. A quasi-matrix ferroelectric memory for future silicon storage - a new high-density and high-speed nonvolatile memory using ferroelectric film [J] . Toshiyuki Nishihara, Yasuyuki Ito 電子情報通信学会技術研究報告. 集積回路. Integrated Circuits and Devices . 2002,第3期

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2. A quasi-matrix ferroelectric memory for future silicon storage - a new high-density and high-speed nonvolatile memory using ferroelectric film [J] . Toshiyuki Nishihara, Yasuyuki Ito 電子情報通信学会技術研究報告. 集積回路. Integrated Circuits and Devices . 2002,第3期

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3. Improved electric behaviors of the Pt/ Bi_(1-x)La_xFe_(0.92)Mn_(0.08)O3~+-Si heterostructure for nonvolatile ferroelectric random-access memory [J] . Jinzhong Zhang, Zhihua Duan, Hao Zhang Meijie Han Journal of Materials Chemistry, C. materials for optical and electronic devices . 2013,第39期

机译：非易失性铁电随机存取存储器的Pt / Bi_（1-x）La_xFe_（0.92）Mn_（0.08）O3 / n〜+ -Si异质结构的改进电学行为
4. Novel gain cell with ferroelectric coplanar capacitor forhigh-density nonvolatile random-access memory [C] . Aoki M., Takauchi H., Tamura H. Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International . -1

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5. Processing and characterization of ferroelectric and electrode materials for nonvolatile and dynamic random-access memories [D] . Vellaikal, Manoj 1996

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6. Excellent low-voltage operating flexible ferroelectric organic transistor nonvolatile memory with a sandwiching ultrathin ferroelectric film [O] . Ting Xu, Lanyi Xiang, Meili Xu, -1

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7. Dual-Storage-Port Nonvolatile SRAM Based on Back-End-of-the-Line Processed Hf0.5Zr0.5O₂ Ferroelectric Capacitors Towards 3D Selector-Free Cross-Point Memory [O] . Hao Jiang, Owen Li, Wenliang Chen, 2020

机译：双存储端口非挥发性SRAM基于后端 - 线路处理的HF0.5ZR0.5O2铁电电容朝向3D选择器的交叉点存储器
8. Properties and characterization of thin film ferroelectric capacitors for nonvolatile memories [R] . Nasby, R. D., Schwank, J. R., Rodgers, M. S., 1990

机译：用于非易失性存储器的薄膜铁电电容器的特性和表征

Novel gain cell with ferroelectric coplanar capacitor for high-density nonvolatile random-access memory

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