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Measurement of dose rate dependence of radiation induced damage to the current gain in bipolar transistors

机译:测量辐射引起的损伤对双极晶体管电流增益的剂量率依赖性

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We report the study of radiation induced change in the current gain of bipolar transistors for three different gamma dose rates. The dose rates differed by a factor of 60 with the lowest close to that anticipated for the LHC, and the highest at a rate we have been routinely using for radiation damage tests. The maximum dose attained was 200 kRad, which is high enough to compare with other measurements. The importance of annealing to high dose rate data is demonstrated.
机译:我们报告了在三种不同的伽马剂量率下,辐射引起的双极晶体管电流增益变化的研究。剂量率相差60倍,最低剂量接近LHC的预期剂量,最高剂量率是我们常规用于辐射损伤测试的剂量率。达到的最大剂量为200 kRad,足以与其他测量结果进行比较。证明了退火对高剂量率数据的重要性。

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