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Microwave Performance Of Single-gate And Dual-gate Modfets Using Double Hetero'unction Modulation-doped Structures

机译：使用双异质结调制掺杂结构的单门和双门Modfets的微波性能

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摘要

1.2-/spl mu/m and 0.3-/spl mu/m gate length n+-GaAs/InGaAs+-AlGaAs Double Heterojunction Modulation-Doped Field-Effect Transistors (DH-MODFETs)have been fabricated with single and dual controlling gate electrodes. Extrinsic DC transconcluclance of 500 mS/mm has been achieved for a 0.3-/spl mu/m single-gate FET. The device also has an f/sub T/ of 43 GHz and 14 dB Maximum Stable Gain (MSG) at 26 GHz with the stability factor (k) as low as 0.6 from the small signal s-parameter measurements from 0.5 to 26.5 GHz. Dual gate FETs fabricated on the same wafer demonstrate higher gain at low frequencies, but the gain decreases rapidly at high frequencies with the stability factor reaching unity at a rate faster than that single-gate DH-MODFETs. Distinctive power gain roll-off slopes of -3, -6, and -12 dB/octave have been observed forthe dual-gate MODFETs.
机译：闸极长度为1.2- / spl mu / m和0.3- / spl mu / m n + -GaAs / InGaAs / n + -AlGaAs双异质结调制掺杂场效应晶体管（DH-MODFET）已使用单控制栅和双控制栅电极制造。对于0.3- / splμm/ m的单栅极FET，已经实现了500 mS / mm的外部DC超导。该器件在26 GHz时的f / sub T /也为43 GHz，最大稳定增益（MSG）为14 dB，而从0.5到26.5 GHz的小信号s参数测量，其稳定性系数（k）低至0.6。在同一晶片上制造的双栅极FET在低频下显示出更高的增益，但是在高频下，增益迅速下降，并且稳定因子以比单栅极DH-MODFET更快的速率达到单位。对于双栅极MODFET，已经观察到-3，-6和-12 dB /倍频程的明显功率增益滚降斜率。

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