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A transimpedance amplifier for OC-768 applications designed using a SiGe HBT BiCMOS technology

机译：使用SiGe HBT BiCMOS技术设计的用于OC-768应用的跨阻放大器

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TIA's were designed with transimpedance gains of 230 /spl Omega/ and 240 /spl Omega/, with corresponding bandwidths of 30 GHz and 29 GHz, respectively. Because the simulated results in the 50 /spl Omega/ test environment match reasonably well with the measured results, it is expected that the TIA performance, when packaged with an appropriate photodiode, will improve, as the simulated results for a TIA with a photodiode indicate.

机译：TIA的互阻增益设计为230 / spl Omega /和240 / spl Omega /，分别具有30 GHz和29 GHz的相应带宽。因为在50 / spl Omega /测试环境中的仿真结果与测量结果相当吻合，所以预期当将TIA性能与适当的光电二极管一起包装时，TIA性能将有所改善，因为带有光电二极管的TIA的仿真结果表明。

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《》|2002年|p.276-277|共2页
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Steidl; S.A.; Rowe; D.; Krawczyk; T.W.; Wong; P.; Tam; A.; Hornbuckle; C.;
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中图分类无线电电子学、电信技术;
关键词
Ge-Si alloys; BiCMOS integrated circuits; amplifiers; integrated optoelectronics; photodiodes; optical receivers; integrated circuit packaging; transimpedance gains; bandwidths; test environment; packaged; photodiode; simulated results; SiGe HBT BiCM;

机译：锗硅合金; BiCMOS集成电路;放大器集成光电光电二极管光学接收器;集成电路封装;互阻抗增益;带宽;测试环境;包装光电二极管模拟结果; SiGe HBT BiCM;

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专利

1. SiGe HBT for application in BiCMOS technology: II. Design, technology and performance [J] . S C Jain, S Decoutere, M Willander Semiconductor science and technology . 2001,第7期

机译：用于BiCMOS技术的SiGe HBT：II。设计，技术和性能
2. A broadband, differential transimpedance amplifier in 0.35 μm SiGe BICMOS technology for 10 Gbit/s fiber optical front-ends [J] . Yunus Akbey, Osman Palatmutcuogullari Analog Integrated Circuits and Signal Processing . 2013,第1期

机译：采用0.35μmSiGe BICMOS技术的宽带差分互阻放大器，用于10 Gbit / s光纤前端
3. Circuit applications of high-performance SiGe : C HBTs integrated in BiCMOS technology [J] . Winkler W., Borngraber J., Heinemann B., Applied Surface Science . 2004,第1a4期

机译：集成在BiCMOS技术中的高性能SiGe：C HBT的电路应用
4. A transimpedance amplifier for OC-768 applications designed using a SiGe HBT BiCMOS technology [C] . S. A. Steidl, D. Rowe, T. W. Krawczyk, Optical Fiber Communications Conference and Exhibit . 2002

机译：用于使用SiGe HBT BICMOS技术设计的OC-768应用的跨阻抗放大器
5. High-Speed Serial Circuits Using SiGe HBT BiCMOS Technology. [D] . Clarke, Ryan. 2015

机译：使用SiGe HBT BiCMOS技术的高速串行电路。
6. STEM nanoanalysis of Au/Pt/Ti-Si3N4 interfacial defects and reactions during local stress of SiGe HBTs [O] . Ali Alaeddine, Cécile Genevois, Laurence Chevalier, 2011

机译：SiGe HBT局部应力过程中Au / Pt / Ti-Si3N4界面缺陷和反应的STEM纳米分析
7. A millimeter-wave power amplifier concept in SiGe BiCMOS technology for investigating HBT physical limitations [O] . Wursthorn Jonas, Herbert Knapp, Wicht Bernhard 2014

机译：SiGe BiCMOS技术中的毫米波功率放大器概念可用于研究HBT物理限制

A transimpedance amplifier for OC-768 applications designed using a SiGe HBT BiCMOS technology

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