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Improvement of wet oxidized AlAs through the use of the In/sub 0.05/AlAs/AlAs/In/sub 0.05/AlAs sandwich structure

机译：通过使用In / sub 0.05 / AlAs / AlAs / In / sub 0.05 / AlAs夹心结构改善湿式氧化AlAs

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Recently, the native oxides of Al(Ga)As has attracted much interest due to their use in distribute Bragg reflectors in vertical cavity surface emitting lasers and insulating buffer layers for metal-oxide-semiconductor field-effect transistors. Many studies have been performed to characterize these oxides and it was found that pure AlAs caused problems with device processing and reliability. The addition of a small amount of Ga was shown to solve the problems associated with pure AlAs, but the oxidation rate varied with Al mole fraction is slowed down. We found that the addition of In had the same effect on the AlAs oxidation, the better thermal stability and lower oxidation rate. In this letter, we present the oxidation characteristic of the In/sub 0.05/AlAs/AlAs/In/sub 0.05/AlAs sandwich structure, which can improve both the thermal stability and oxidation rate greatly.
机译：近来，Al（Ga）As的天然氧化物由于其在垂直腔表面发射激光器中分布的Bragg反射器和用于金属氧化物半导体场效应晶体管的绝缘缓冲层中而引起了人们的极大兴趣。已经进行了许多研究来表征这些氧化物，并且发现纯AlAs会引起器件加工和可靠性方面的问题。已表明添加少量的Ga可以解决与纯AlAs有关的问题，但是随着Al摩尔分数的变化，氧化速度变慢了。我们发现，In的添加对AlAs的氧化具有相同的作用，具有更好的热稳定性和较低的氧化速率。在这封信中，我们介绍了In / sub 0.05 / AlAs / AlAs / In / sub 0.05 / AlAs夹心结构的氧化特性，它可以大大提高热稳定性和氧化速率。

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