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Blue organic light emitting diode (OLED) from two-layer structure of 4,4'-bis(2,2'diphenylvinil)-1,1'-biphenyl (DPVBi) and PVK

机译:由4,4'-双(2,2'diphenylvinil)-1,1'-联苯(DPVBi)和PVK的两层结构构成的蓝色有机发光二极管(OLED)

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This paper reports the performance of blue color organic light emitting diode (OLED) that were fabricated using 4,4'-bis(2,2'diphenilvinil)-1,1'-biphenil (DPVBi) compound. The two-layer devices of the structure ITO/PVK/DPVBi/Al with variation of DPVBi thickness in the range of 20 nm to 65 nm were fabricated. Here the indium tin oxide (ITO) used as anode, poly-9-vinylcarbozole (PVK) as hole transporting layer, 4,4'-bis(2,2'diphenilvinil)-1,1'-biphenil (DPVBi) as the blue emitting layer and aluminum (Al) as the cathode. The DPVBi was prepared by thermal evaporation while the PVK film was prepared by spin coating technique. The performance of the device was analyzed through the current-voltage (IV) curve and the electroluminescence spectrum. The device with 56 nm DPVBi layer showed the optimum properties where its emitted light spectrum at peak of 483 nm and it turn-on voltage was 8.0 V.
机译:本文报道了使用4,4'-BIS(2,2'diphenilvinil)-1,1'-Biphenil(DPVBI)化合物制造的蓝色有机发光二极管(OLED)的性能。结构ITO / PVK / DPVBI / Al的两个层装置,具有20nm至65nm的DPVBI厚度的变化。这里,用作阳极,聚-9-乙烯基鸟(PVK)作为空穴传输层的氧化铟锡(ITO),4,4'-BIS(2,2'diphenilvinil)-1,1'-Biphenil(DPVBI)作为蓝色发光层和铝(Al)作为阴极。通过热蒸发制备DPVBI,同时通过旋涂技术制备PVK膜。通过电流 - 电压(IV)曲线和电致发光光谱分析该装置的性能。具有56nm DPVBI层的装置显示出最佳性能,其中峰值为483nm的发射光谱,并且其导通电压为8.0V。

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