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Novel Thermodynamic Approach To A Unified General Model Of Carrier And Energy Transport In Semiconductor Devices

机译：半导体器件载流子和能量传输统一通用模型的新型热力学方法

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《》|2001年|P.47-48|共2页
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Wachutka; G.;
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中图分类无线电电子学、电信技术;
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1. A THERMODYNAMICAL APPROACH TO THE LAWS OF CURRENT CARRIER AND THERMAL ENERGY TRANSPORT IN SEMICONDUCTORS [J] . S. SIKORSKI Electron Technology . 1998,第2期

机译：半导体中载流子和热能传输定律的热力学方法
2. PVRD-FASP: A Unified Solver for Modeling Carrier and Defect Transport in Photovoltaic Devices [J] . Markvart Tom Photovoltaics, IEEE Journal of . 2019,第6期

机译：PVRD-FASP：一种用于建模光伏器件中载流子和缺陷的统一求解器
3. A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions—Part I: Large-Signal Sensitivity [J] . Simona Donati Guerrieri, Fabrizio Bonani, Francesco Bertazzi, IEEE Transactions on Electron Devices . 2016,第3期

机译：动态条件下基于灵敏度和变异性物理模型的半导体器件的统一方法—第一部分：大信号灵敏度
4. Novel Thermodynamic Approach To A Unified General Model Of Carrier And Energy Transport In Semiconductor Devices [C] . Wachutka G., Institute of Electric and Electronic Engineer Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits . 2001

机译：统一载波统一通用模型的新型热力学方法和半导体器件中的能量传输
5. PHYSICS AND NUMERICAL MODELING OF CARRIER TRANSPORT IN SUBMICRON SEMICONDUCTOR DEVICES. [D] . COOK, ROBERT KIMBAL. 1981

机译：亚微半导体器件中载流子传输的物理和数值模拟。
6. Physical Modeling of Activation Energy in Organic Semiconductor Devices based on Energy and Momentum Conservations [O] . Ling-Feng Mao, H. Ning, Changjun Hu, -1

机译：基于能量和动量守恒的有机半导体器件中活化能的物理建模
7. Energy Models for One-Carrier Transport in Semiconductor Devices [O] . Shu, Chi-Wang, Jerome, Joseph W. 1991

机译：半导体器件中单载流子传输的能量模型
8. Energy Models for One-Carrier Transport in Semiconductor Devices [R] . Jerome, J. W., Shu, C. W. 1991

机译：半导体器件中单载波传输的能量模型

Novel Thermodynamic Approach To A Unified General Model Of Carrier And Energy Transport In Semiconductor Devices

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