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Development of intense pulsed heavy ion beam accelerator using bipolar pulse for implantation to semiconductor

机译：利用双极脉冲注入半导体的强脉冲重离子束加速器的研制

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Intense pulsed heavy ion beams (PHIB) are expected to be applied to the implantation technology for semiconductor materials. In the application it is very important to purify the ion beam. To produce a pure PHIB a new type of pulsed power ion accelerator using bipolar pulse is proposed, which is called as "bipolar pulse accelerator". Gas puff plasma gun, a B/sub r/ type magnetically insulated acceleration gap and bipolar pulse generators has been developed to realize the bipolar pulse accelerator. In the experiment the gas puff plasma gun generates a nitrogen ion flux of current density around 200 A/cm/sup 2/. B/sub r/ magnetically insulated gap was tested with carbon plasma gun at acceleration potential of 100 kV and observed an ion beam of current density 2.5 A/cm/sup 2/. To generate bipolar pulses two types of PFL were proposed, the principle of the PFLs were confirmed theoretically and experimentally.
机译：有望将强脉冲重离子束（PHIB）应用于半导体材料的注入技术。在应用中，净化离子束非常重要。为了生产纯的PHIB，提出了一种使用双极脉冲的新型脉冲功率离子加速器，称为“双极脉冲加速器”。为了实现双极型脉冲加速器，已经开发出了气吹等离子枪，B / sub r /型磁绝缘加速间隙和双极型脉冲发生器。在实验中，吹气等离子体枪产生电流密度约为200 A / cm / sup 2 /的氮离子通量。用碳等离子枪在100kV的加速电势下测试B / subr /磁绝缘间隙，并观察到电流密度为2.5A / cm / sup 2 /的离子束。为了产生双极脉冲，提出了两种类型的PFL，在理论上和实验上证实了PFL的原理。

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